Amorphous and Crystalline Silicon Carbide IV / Springer Proceedings in Physics Bd.71 (PDF)
Proceedings of the 4th International Conference, Santa Clara, CA, October 9-11, 1991
(Sprache: Englisch)
Silicon carbide and other group IV-IV materials in their
amorphous, microcrystalline, and crystalline forms have a
wide variety of applications.The contributions to this
volume report recent developments and trends in the field.
The purpose is to...
amorphous, microcrystalline, and crystalline forms have a
wide variety of applications.The contributions to this
volume report recent developments and trends in the field.
The purpose is to...
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Produktinformationen zu „Amorphous and Crystalline Silicon Carbide IV / Springer Proceedings in Physics Bd.71 (PDF)“
Silicon carbide and other group IV-IV materials in their
amorphous, microcrystalline, and crystalline forms have a
wide variety of applications.The contributions to this
volume report recent developments and trends in the field.
The purpose is to make available the current state of
understanding of the materials and their potential
applications. Eachcontribution focuses on a particular
topic, such as preparation methods, characterization, and
models explaining experimental findings. The volume also
contains the latest results in the exciting field of SiGe/Si
heterojunction bipolar transistors.
The reader will find this book valuable as a reference
source, an up-to-date and in-depth overview of this field,
and, most importantly, as a window into the immense range of
reading potential applications of silicon carbide. It is
essential for scientists, engineers and students interested
in electronic materials, high-speed heterojunction devices,
and high-temperature optoelectronics.
amorphous, microcrystalline, and crystalline forms have a
wide variety of applications.The contributions to this
volume report recent developments and trends in the field.
The purpose is to make available the current state of
understanding of the materials and their potential
applications. Eachcontribution focuses on a particular
topic, such as preparation methods, characterization, and
models explaining experimental findings. The volume also
contains the latest results in the exciting field of SiGe/Si
heterojunction bipolar transistors.
The reader will find this book valuable as a reference
source, an up-to-date and in-depth overview of this field,
and, most importantly, as a window into the immense range of
reading potential applications of silicon carbide. It is
essential for scientists, engineers and students interested
in electronic materials, high-speed heterojunction devices,
and high-temperature optoelectronics.
Bibliographische Angaben
- 2012, 1992, 432 Seiten, Englisch
- Herausgegeben: Cary Y. Yang, M. Mahmudur Rahman, Gary L. Harris
- Verlag: Springer Berlin Heidelberg
- ISBN-10: 3642848044
- ISBN-13: 9783642848049
- Erscheinungsdatum: 06.12.2012
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
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- Größe: 39 MB
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Sprache:
Englisch
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