Zamudio Flores, J: Modeling of Large-Size GaN HEMTs
(Sprache: Englisch)
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis...
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This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. Analysis of such capacitances leads to original equations, employed to form capacitance ratios. Basic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. The extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. All IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Bibliographische Angaben
- Autor: Jaime Alberto Zamudio Flores
- 255 Seiten, Maße: 15,1 x 20,8 cm, Kartoniert (TB), Englisch
- Verlag: Universitt Kassel - Universittsbibliothek Kassel -
- ISBN-10: 3862193640
- ISBN-13: 9783862193646
- Erscheinungsdatum: 21.08.2012
Sprache:
Englisch
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