Handbook of Nitride Semiconductors and Devices: Vol.1 Materials Properties, Physics and Growth
(Sprache: Englisch)
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and...
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Klappentext zu „Handbook of Nitride Semiconductors and Devices: Vol.1 Materials Properties, Physics and Growth “
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric field, low- and high-magnetic field for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Inhaltsverzeichnis zu „Handbook of Nitride Semiconductors and Devices: Vol.1 Materials Properties, Physics and Growth “
General Properties of Nitrides. - Electronic Band Structure and Polarization Effects. - Growth and Growth Methods of Nitride Semiconductors. - Extended Defects, Point Defects, Role of Hydrogen, Doping Including Transition Metals
Bibliographische Angaben
- 2007, 800 Seiten, 10 farbige Abbildungen, 1000 Schwarz-Weiß-Abbildungen, Maße: 23,5 cm, Gebunden, Englisch
- Verlag: Springer Berlin
- ISBN-10: 3540469265
- ISBN-13: 9783540469261
Sprache:
Englisch
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