High-k Gate Dielectrics for CMOS Technology

PREFACE
 
PART ONE: Scaling and Challenge of Si-based CMOS
 
SCALING AND LIMITATION OF SI-BASED CMOS
Introduction
Scaling and Limitation of CMOS
Toward Alternative Gate Stacks Technology
Improvements and Alternative to CMOS Technologies
Potential Technologies Beyond CMOS
Conclusions
 
PART TWO: High-k Deposition and Materials Characterization
 
ISSUES IN HIGH-K GATE DIELECTRICS AND ITS STACK INTERFACES
Introduction
High-k Dielectrics
Metal Gates
Integration of High-k Gate Dielectrics with Alternative Channel Materials
Summary
 
UV ENGINEERING OF HIGH-K THIN FILMS
Introduction
Gas Discharge Generation of UV (Excimer) Radiation
Excimer Lamp Sources Based on Silent Discharges
Predeposition Surface Cleaning for High-k Layers
UV Photon Deposition of Ta2O5 Films
Photoinduced Deposition of Hf1_xSixOy Layers
Summary
 
ATOMIC LAYER DEPOSITION PROCESS OF HF-BASED HIGH-K GATE DIELECTRIC FILM ON SI SUBSTRATE
Introduction
Precursor Effect on the HfO2 Characteristics
Doped and Mixed High-k
Summary
 
STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF ALTERNATIVE HIGH-K DIELECTRICS FOR CMOS APPLICATIONS
Introduction
Requirement of High-k Oxide Materials
Rare-Earth Oxide as Alternative Gate Dielectrics
Structural Characteristics of High-k RE Oxide Films
Electrical Characteristics of High-k RE Oxide Films
Conclusions and Perspectives
 
HYGROSCOPIC TOLERANCE AND PERMITTIVITY ENHANCEMENT OF LANTHANUM OXIDE (LA2O3) FOR HIGH-K GATE INSULATORS
Introduction
Hygroscopic Phenomenon of La2O3 Films
Low Permittivity Phenomenon of La2O3 Films
Hygroscopic Tolerance Enhancement of La2O3 Films
Hygroscopic Tolerance Enhancement of La2O3 Films by Ultraviolet Ozone Treatment
Thermodynamic Analysis of Moisture Absorption Phenomenon in High-k Gate Dielectrics
Permittivity Enhancement of La2O3 Films by Phase Control
Summary
 
CHARACTERIZATION OF HIGH-K DIELECTRIC INTERNAL

Gang He is Professor at the School of Physics and Materials Science of the Anhui University, China. He obtained his academic degrees from the Institute of Solid State Physics of the Chinese Academy of Sciences. His research interests and efforts cover the areas of the preparation,
characterization, fundamental understanding and associated applications of high-k gate dielectric thin films in novel devices. Due to his outstanding performance in research work, Professor Gang He won a scholarship award from the Chinese Academy of Sciences in 2005 and a grant of the Japanese Society for the Promotion of Science in 2006.
 
Zhaoqi Sun is the President of the School of Physics and Materials Science at the Anhui University. He graduated from Sichuan University and obtained his academic degrees from the University of Science and Technology of China. His research is focused on functional thin film materials for applications in microelectronics and solar cells. Professor Zhaoqi Sun has authored more than 140 scientific publications
and has received numerous scientific awards, including the Science and Technology Award of the AnhuiProvince and an Outstanding Teacher Award.