Ion Beams in Materials Processing and Analysis
(Sprache: Englisch)
This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.
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Produktinformationen zu „Ion Beams in Materials Processing and Analysis “
This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.
Klappentext zu „Ion Beams in Materials Processing and Analysis “
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Inhaltsverzeichnis zu „Ion Beams in Materials Processing and Analysis “
- Preface 1. Introduction
2. Fundamentals
2.1 Introduction
2.2 Binary Elastic Collisions
2.2.1 Classical Treatment of Binary Collisions
2.2.2 Validity of the Classical Treatment
2.2.3 Quantum- Mechanical Scattering
2.3 Nuclear Interaction in a Screened Coulomb Potential
2.3.1 Statistical Model of the Atom
2.3.2 Interatomic Potentials
2.3.3 Scattering Cross Section
2.4 Ion Stopping
2.4.1 General Definitions
2.4.2 Nuclear Stopping
2.4.3 Electronic Stopping
2.4.3.1 Charge State of an Ion Moving in a Solid
2.4.3.2 Low-Velocity Electronic Stopping
2.4.3.3 High-Velocity Electronic Stopping
2.4.3.4 Total Stopping Cross Section
2.4.4 Semi-Empirical Stopping Data
2.4.5 Scaling and Additivity Rules
2.4.5.1 Isotope Scaling
2.4.5.2 Reciprocity
2.4.5.3 Stopping in Compounds
2.5 Ion Channeling
2.5.1 Critical Conditions
2.5.2 Trajectories and Flux Distributions
2.5.3 Dechanneling
2.5.4 Stopping under Channeling Conditions
2.6 Computer Simulation of Ion- Solid Interaction
2.6.1 Binary Collision Approximation
2.6.1.1 Code Description
2.6.1.2 Input Parameters
2.6.1.3 Range of Validity
2.6.1.4 Dynamic Simulation
2.6.2 Molecular Dynamics Simulations
2.6.2.1 Numerical Integration
2.6.2.2 Interaction Potentials
2.6.2.3 Boundary Conditions
2.7 Ion Ranges and Range Distributions
2.7.1 Analytical Treatment
2.7.2 Computer Simulation
2.7.3 High-Fluence Ion Implantation
2.8 Cascades and Spikes
2.8.1 The Linear Cascade
2.8.2 Thermal Spikes
2.8.2.1 Elastic Thermal Spike
2.8.2.2 Inelastic Thermal Spike
2.9 Sputtering
2.9.1 Linear Cascade Sputtering
2.9.1.1 Analytical Treatment
2.9.1.2 Computer Simulation
2.9.2 Thermal Spike Sputtering
2.9.3 Preferential Sputtering of Compounds
2.9.4 Sputter- Controlled Implantation Profiles
2.10 Damage
2.10.1 Linear Cascade Damage
2.10.2 Damage and Thermal Spikes
2.11 Ion Mixing
2.11.1 Analytical Treatment
2.11.2 Computersimulation
3. Ion
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Beam Technology
3.1 Principles of Ion Accelerators
3.1.1 Low Energy Ion Accelerators (Ion Implanters)
3.1.2 High Energy Ion Accelerators
3.2 Ion Sources
3.2.1 Hot Filament (Hot Cathode) Ion Sources
3.2.2 Cold Cathode Ion Source (Penning Ion Source)
3.2.3 High Frequency (RF) Ion Source
3.2.4 Duoplasmatron Ion Source
3.2.5 Ion Sources for Electrostatic Accelerators
3.2.6 Cesium Sputtering Ion Sources
3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)
3.2.8 Beam Extraction from Ion Sources
3.3 Ion Acceleration
3.4 Ion Beam Handling
3.4.1 Ion Mass Separation
3.4.2 Ion Beam Focusing
3.4.3 Ion Beam Scanning
3.4.4 Ion Beam Current Measurement
3.4.5 Ion Detection (Detectors, Spectrometers)
3.5 Ion Implantation Systems
3.5.1 Common Low Energy Beam Line Implanters
3.5.2 Specialized Low Energy Beam Line Implanters
3.5.3 High Energy Beam Line Implanters
3.5.4 Plasma Based Ion Implanters (PBII)
3.6 Electrostatic Ion Accelerator Systems
3.6.1 Single-Stage Electrostatic Accelerators
3.6.2 Two-Stage Electrostatic Accelerators
3.7 Focused Ion Beam Systems
3.7.1 Low Energy Focused Ion Beams
3.7.2 High Energy Focused Ion Beams
4. Materials Processing
4.1 Ion Irradiation and Damage Annealing
4.2 Ion Implantation into Semiconductors
4.2.1 Ion Implantation into Silicon
4.2.1.1 Advanced CMOS Technology
4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices
4.2.1.3 Silicon Detector and Sensor Technology
4.2.2 Ion Implantation into Germanium
4.2.3 Ion Implantation into Compound Semiconductors
4.2.3.1 III-V Semiconductors
4.2.3.2 Group III-Nitride Materials
4.2.3.3 Silicon Carbide
4.3 Ion Beam Synthesis of New Phases in Solids
4.3.1 Buried Insulating Layers in Silcon
4.3.2 Ion Beam Synthesized Silicide Layers
4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators
4.4 Ion Beam Mixing of Interfaces
4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)
4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)
4.7 Ion Beam Shaping of Nanomaterials
4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)
4.8.1 Ion Implantation of Metals
4.8.2 Ion Implantation into Polymers
4.8.3 Ion Implantation into Insulating Optical Materials
5. Ion Beam Preparation of Materials
5.1 Displacement of Target Atoms by Sputtering
5.2 Effects on Sputtering Yield
5.2.1 Ion Energy and Ion Atomic Number
5.2.2 Ion Incident Direction
5.2.3 Selective Sputtering
5.2.4 Targert Material
5.2.5 Preferential Sputtering
5.3 Ion Beam Induced Target Modifications
5.3.1 Ion Beam Cleaning and Etching
5.3.2 Ion Beam Induced Material Deposition
5.3.3 Ion Beam Depth Profiling
5.3.4 Ion Beam Cutting
5.3.5 Ion Beam Thinning
5.4 Focus Ion Beam (FIB) Preparation
5.4.1 FIB Induced Cross Section Preparation
5.4.2 FIB Induced Thin Film Preparation
5.4.3 Limiting Effects at FIB Preparation
6. Ion Beam Analysis of Materials
6.1 Ion- Solid State Interactions
6.2 Ion Beam Analytical Techniques - a Survey
6.3 Ion Beam Scattering Techniques
6.3.1 Rutherford Backscattering (RBS)
6.3.2 Medium Energy Ion Scattering (MEIS)
6.3.3 Elastic Recoil Detection Analysis (ERDA)
6.4 Ion Beam Induced Photon Emission
6.4.1 Particle Induced X-Ray Emission (PIXE)
6.4.2 Particle Induced ?-Ray Emission (PIGE)
6.5 Nuclear Reaction Analysis (NRA)
6.6 Ion Beam Induced Light and Electron Emission
6.7 Secondary Ion Emission
6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)
6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)
6.8 Ion Beam Imaging Techniques
6.8.1 Field Ion Microscopy
6.8.2 Ion Microscopy with Stationary Beam
6.8.3 Scanning Ion Microscopy
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
- Indexduced Ph
3.1 Principles of Ion Accelerators
3.1.1 Low Energy Ion Accelerators (Ion Implanters)
3.1.2 High Energy Ion Accelerators
3.2 Ion Sources
3.2.1 Hot Filament (Hot Cathode) Ion Sources
3.2.2 Cold Cathode Ion Source (Penning Ion Source)
3.2.3 High Frequency (RF) Ion Source
3.2.4 Duoplasmatron Ion Source
3.2.5 Ion Sources for Electrostatic Accelerators
3.2.6 Cesium Sputtering Ion Sources
3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)
3.2.8 Beam Extraction from Ion Sources
3.3 Ion Acceleration
3.4 Ion Beam Handling
3.4.1 Ion Mass Separation
3.4.2 Ion Beam Focusing
3.4.3 Ion Beam Scanning
3.4.4 Ion Beam Current Measurement
3.4.5 Ion Detection (Detectors, Spectrometers)
3.5 Ion Implantation Systems
3.5.1 Common Low Energy Beam Line Implanters
3.5.2 Specialized Low Energy Beam Line Implanters
3.5.3 High Energy Beam Line Implanters
3.5.4 Plasma Based Ion Implanters (PBII)
3.6 Electrostatic Ion Accelerator Systems
3.6.1 Single-Stage Electrostatic Accelerators
3.6.2 Two-Stage Electrostatic Accelerators
3.7 Focused Ion Beam Systems
3.7.1 Low Energy Focused Ion Beams
3.7.2 High Energy Focused Ion Beams
4. Materials Processing
4.1 Ion Irradiation and Damage Annealing
4.2 Ion Implantation into Semiconductors
4.2.1 Ion Implantation into Silicon
4.2.1.1 Advanced CMOS Technology
4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices
4.2.1.3 Silicon Detector and Sensor Technology
4.2.2 Ion Implantation into Germanium
4.2.3 Ion Implantation into Compound Semiconductors
4.2.3.1 III-V Semiconductors
4.2.3.2 Group III-Nitride Materials
4.2.3.3 Silicon Carbide
4.3 Ion Beam Synthesis of New Phases in Solids
4.3.1 Buried Insulating Layers in Silcon
4.3.2 Ion Beam Synthesized Silicide Layers
4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators
4.4 Ion Beam Mixing of Interfaces
4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)
4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)
4.7 Ion Beam Shaping of Nanomaterials
4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)
4.8.1 Ion Implantation of Metals
4.8.2 Ion Implantation into Polymers
4.8.3 Ion Implantation into Insulating Optical Materials
5. Ion Beam Preparation of Materials
5.1 Displacement of Target Atoms by Sputtering
5.2 Effects on Sputtering Yield
5.2.1 Ion Energy and Ion Atomic Number
5.2.2 Ion Incident Direction
5.2.3 Selective Sputtering
5.2.4 Targert Material
5.2.5 Preferential Sputtering
5.3 Ion Beam Induced Target Modifications
5.3.1 Ion Beam Cleaning and Etching
5.3.2 Ion Beam Induced Material Deposition
5.3.3 Ion Beam Depth Profiling
5.3.4 Ion Beam Cutting
5.3.5 Ion Beam Thinning
5.4 Focus Ion Beam (FIB) Preparation
5.4.1 FIB Induced Cross Section Preparation
5.4.2 FIB Induced Thin Film Preparation
5.4.3 Limiting Effects at FIB Preparation
6. Ion Beam Analysis of Materials
6.1 Ion- Solid State Interactions
6.2 Ion Beam Analytical Techniques - a Survey
6.3 Ion Beam Scattering Techniques
6.3.1 Rutherford Backscattering (RBS)
6.3.2 Medium Energy Ion Scattering (MEIS)
6.3.3 Elastic Recoil Detection Analysis (ERDA)
6.4 Ion Beam Induced Photon Emission
6.4.1 Particle Induced X-Ray Emission (PIXE)
6.4.2 Particle Induced ?-Ray Emission (PIGE)
6.5 Nuclear Reaction Analysis (NRA)
6.6 Ion Beam Induced Light and Electron Emission
6.7 Secondary Ion Emission
6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)
6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)
6.8 Ion Beam Imaging Techniques
6.8.1 Field Ion Microscopy
6.8.2 Ion Microscopy with Stationary Beam
6.8.3 Scanning Ion Microscopy
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
- Indexduced Ph
... weniger
Autoren-Porträt von Bernd Schmidt, Klaus Wetzig
Bernd Schmidt received his PhD in Physics at the State University of St. Petersburg (Russia) in 1976. Since 1994 he has been head of the Process Technology Division at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. His research interests include semiconductor technology as well as ion implantation and the synthesis of nanostructures. He is author of the specialist book "Silicon Sensors" (1986) and of more than 150 refereed journal papers.
Klaus Wetzig received his PhD (1967) and postdoctoral (1973) degrees in Physics at the TU Dresden, Germany. From 1992 until his retirement in 2006 he was full professor of Materials Analysis at the TU Dresden and research director at the Leibniz Institute for Solid State and Materials Research Dresden (IFW). His research interests include materials analysis, nanostructures and particle-solid interactions. He is author of several specialist books and of more than 300 refereed journal
Bernd Schmidt received his PhD in Physics at the State University of St. Petersburg (Russia) in 1976. Since 1994 he has been head of the Process Technology Division at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. His research interests include semiconductor technology as well as ion implantation and the synthesis of nanostructures. He is author of the specialist book "Silicon Sensors" (1986) and of more than 150 refereed journal papers.
Klaus Wetzig received his PhD (1967) and postdoctoral (1973) degrees in Physics at the TU Dresden, Germany. From 1992 until his retirement in 2006 he was full professor of Materials Analysis at the TU Dresden and research director at the Leibniz Institute for Solid State and Materials Research Dresden (IFW). His research interests include materials analysis, nanostructures and particle-solid interactions. He is author of several specialist books and of more than 300 refereed journal papers.
Bibliographische Angaben
- Autoren: Bernd Schmidt , Klaus Wetzig
- 2013, 418 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer
- ISBN-10: 321199355X
- ISBN-13: 9783211993552
- Erscheinungsdatum: 13.12.2012
Sprache:
Englisch
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