Nanoscale Phenomena in Ferroelectric Thin Films
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Organic Thin Film Transistor Integration
Flora Li, Arokia Nathan, Yiliang Wu, Beng S. Ong
119.00 €
149.99 €
235.39 €
Chemistry of the Semiconductor Industry
A. Ledwith, S. J. Moss
267.49 €
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
Ting Lei
106.99 €
160.49 €
Optical Near-Field Recording
Junji Tominaga, Takashi Nakano
85.55 €
Solar Cells Based on Colloidal Nanocrystals
Holger Borchert
139.09 €
267.49 €
Part I: Electrical Characterization in Nanoscale Ferroelectric Capacitor.
I. Testing and characterization of ferroelectric thin film capacitors; In Kyeong Yoo. 1. Test Circuits. 2. Hysteric Property. 3. Capacitance and Current. 4.Stored Energy. 5. Ageing. 6. Fatigue. 7. Imprint. 8. Leakage Current. 9. Electrical Degradation. 10. Breakdown. 11. Pyroelectric Effect. 12. Additional tests for commercial memory cells. References.
II. Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size; I. Stolichnov. 1. Introduction. 2. Size effects: role of the ferroelectric film thickness, impact of the passive layer and local charge injection. 3. Size effects: role of the capacitor size and impact of nonhomogeneous stress. 4. Conclusions and outlook. Acknowledgements. References.
III. Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy; A. Gruverman. 1. Introduction. 2. Experimental Approach. 3. Variations in Ferroelectric Properties at the nanoscale. 4. PFM studies of retention behavior. 5. Nanoscale Leakage Current Mapping. 6. Conclusion. Acknowledgment. References.
IV. Nanoscale dynamics in ferroelectric thin films; V. Nagarajan, R. Ramesh. 1. Introduction. 2. Thin Film Materials and Characterization. 3. Polarization Relaxation at the Nanoscale. 4. Nanoscale Piezoelectric and Ferroelectric Behavior. 5. Conclusions. Acknowledgements. References.
V. Polarization switching and fatigue of ferroelectric thin films studied by PFM; Seungbum Hong. 1. Introduction. 2. Polarization switching. 3. Fatigue: suppression of switchable polarization. 4. Summary and Conclusion. Acknowledgments. References.
Part II: Nano Domain Manipulation and Visualization in Ferroelectric Materials.
VI. Domain switching and self-polarization in perovskite thin films; A. Roelofs, K. Szot, R. Waser. 1. Introduction. 2. PTO polycrystalline thin films on platinized
VII. Ferroelectric domain structure observed by EFM; Z.G. Khim, J.W. Hong. 1. Introduction. 2. Detection Mechanism of DC-EFM. 3. Observation of Ferroelectric Domains. 4. Control of ferroelectric domains. 5. Conclusion. Acknowledgements. References.
VIII. Polarization and charge dynamics in ferroelectric materials with SPM; S. Kalinin, D.A. Bonnell. 1. Introduction. 2. Principles of Non-contact Electrostatic SPMs. 3. Domain Structure Reconstruction from SPM. 4. Origins of Domain Contrast in EFM and SSPM. 5. Polarization and Charge Dynamics on the BaTiO3 (100) Surface. 6. Screening and Thermodynamics of Adsorption on BaTiO3 (100) Surfaces. 7. Domain Selective Photochemical Activity on Ferroelectric Surfa
- 2004, 2004, 306 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Herausgegeben von Hong, Seungbum
- Verlag: Springer Netherlands
- ISBN-10: 1402076304
- ISBN-13: 9781402076305
- Erscheinungsdatum: 31.01.2004
Organic Thin Film Transistor Integration
Flora Li, Arokia Nathan, Yiliang Wu, Beng S. Ong
119.00 €
149.99 €
235.39 €
Chemistry of the Semiconductor Industry
A. Ledwith, S. J. Moss
267.49 €
Design, Synthesis, and Structure-Property Relationship Study of Polymer Field-Effect Transistors
Ting Lei
106.99 €
160.49 €
Optical Near-Field Recording
Junji Tominaga, Takashi Nakano
85.55 €
Solar Cells Based on Colloidal Nanocrystals
Holger Borchert
139.09 €
267.49 €
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