Sun, H: Optimization and Characterization of GaN-Based High
(Sprache: Englisch)
Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled...
Leider schon ausverkauft
Buch
- Lastschrift, Kreditkarte, Paypal, Rechnung
- Kostenlose Rücksendung
Produktdetails
Produktinformationen zu „Sun, H: Optimization and Characterization of GaN-Based High “
Klappentext zu „Sun, H: Optimization and Characterization of GaN-Based High “
Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies.A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 µm to be realized.High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 µm GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 µm HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates.This thesis has also defined the state-of-the-art performance on AlInN/GaNHEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-SiHEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62
... mehr
(1.5) dB andassociated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reportedin nitride HEMTs and the GA values are the best so far found in the literature.
... weniger
Bibliographische Angaben
- Autor: Haifeng Sun
- 2012, 165 Seiten, 85 farbige Abbildungen, Maße: 14,9 x 21,1 cm, Kartoniert (TB), Englisch
- Verlag: Shaker
- ISBN-10: 3844006834
- ISBN-13: 9783844006834
Sprache:
Englisch
Kommentar zu "Sun, H: Optimization and Characterization of GaN-Based High"
0 Gebrauchte Artikel zu „Sun, H: Optimization and Characterization of GaN-Based High“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "Sun, H: Optimization and Characterization of GaN-Based High".
Kommentar verfassen