Technology CAD - Computer Simulation of IC Processes and Devices

1 Technology-Oriented CAD.- 1.1 Introduction.- 1.2 Process and Device CAD.- 1.3 Process Simulation Techniques.- 1.4 Interfaces in Process and Device CAD.- 1.5 CMOS Technology.- 1.6 Summary.- 1.7 Exercises.- 1.8 References.- 2 Introduction to SUPREM.- 2.1 Introduction.- 2.2 Ion Implantation.- 2.3 Oxidation.- 2.4 Impurity Diffusion.- 2.5 Summary.- 2.6 Exercises.- 2.7 References.- 3 Device CAD.- 3.1 Introduction.- 3.2 Semiconductor Device Analysis.- 3.3 Field-Effect Structures.- 3.4 Bipolar Junction Structures.- 3.5 Summary.- 3.6 Exercises.- 3.7 References.- 4 PN Junctions.- 4.1 Introduction.- 4.2 Carrier Densities: Equilibrium Case.- 4.3 Non-Equilibrium.- 4.4 Carrier Transport and Conservation.- 4.5 The pn Junction - Equilibrium Conditions.- 4.6 The pn Junction - Non-equilibrium.- 4.7 SEDAN Analysis.- 4.8 Summary.- 4.9 Exercises.- 4.10 References.- 5 MOS Structures.- 5.1 Introduction.- 5.2 The MOS Capacitor.- 5.3 Basic MOSFET I-V Characteristics.- 5.4 Threshold Voltage in Nonuniform Substrate.- 5.5 MOS Device Design by Simulation.- 5.6 Summary.- 5.7 Exer cises.- 5.8 References.- 6 Bipolar Transistors.- 6.1 Introduction.- 6.2 Lateral pnp Transistor Operation.- 6.3 Transport Current Analysis.- 6.4 Generalized Charge Storage Model.- 6.5 Transistor Equivalent Circuits.- 6.6 Second Order Effects.- 6.7 Transit Time and Cutoff Frequency.- 6.8 Application of Simulation Tools.- 6.9 Summary.- 6.10 Exercises.- 6.11 References.- 7 BiCMOS Technology.- 7.1 Introduction.- 7.2 Triple-Diffused BiCMOS.- 7.3 Buried-Epitaxial Layer BiCMOS.- 7.4 Summary.- 7.5 Exercises.- 7.6 References.- A Numerical Analyis.- B BiCMOS Technology Overview.- C Templates for PISCES Simulation.