The Physics of Semiconductor Devices, 2 Teile
Proceedings of IWPSD 2017
(Sprache: Englisch)
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and...
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Produktinformationen zu „The Physics of Semiconductor Devices, 2 Teile “
Klappentext zu „The Physics of Semiconductor Devices, 2 Teile “
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community.The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Inhaltsverzeichnis zu „The Physics of Semiconductor Devices, 2 Teile “
Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot âEUR" Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.
Bibliographische Angaben
- 2019, 1st ed. 2019, 1299 Seiten, mit farbigen Abbildungen, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Herausgegeben:Sharma, R. K; Rawal, D.S.
- Herausgegeben: D. S. Rawal, R. K. Sharma
- Verlag: Springer
- ISBN-10: 3319976036
- ISBN-13: 9783319976037
- Erscheinungsdatum: 01.02.2019
Sprache:
Englisch
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