Two-dimensional hole systems in indium-based quantum well heterostructures
(Sprache: Englisch)
The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for...
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The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of In0.75Al0.25As/In0.75Ga0.25As/InAs:Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate.
Bibliographische Angaben
- Autor: Josef Loher
- 2016, 166 Seiten, 50 farbige Abbildungen, Maße: 24 cm, Kartoniert (TB), Englisch
- Verlag: Universitätsverlag Regensburg
- ISBN-10: 3868451374
- ISBN-13: 9783868451375
Sprache:
Englisch
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