Advances in Scanning Probe Microscopy
(Sprache: Englisch)
This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theoryof atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound...
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This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theoryof atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.
Inhaltsverzeichnis zu „Advances in Scanning Probe Microscopy “
- Theory of Scanning Probe Microscopy.- First-Principles Electronic Structure Theory for Semiconductor Surfaces.
- Atomic Structure of 6H-SiC.
- Application of Atom Manipulation for Fabricating Nanoscale and Atomic-scale Structures on Si Surfaces.
- Theoretical Insights into Fullerenes Absorbed on Surfaces: Comparison with STM Studies.
- Apparent Barrier Height and Barrier-Height Imaging of Surfaces.
- Mesoscopic Work Function Measurement by Scanning Tunneling Microscope.
- Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces.
- Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Microscopy.
Bibliographische Angaben
- 2000, 2000., 343 Seiten, Maße: 23,5 cm, Gebunden, Englisch
- Ed. by T. Sakurai and Yoshibo Watanabe
- Verlag: Springer Berlin
- ISBN-10: 3540667180
- ISBN-13: 9783540667186
Sprache:
Englisch
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