Bias Temperature Instability for Devices and Circuits
(Sprache: Englisch)
This book provides a reference to one of the more challenging reliability issues plaguing modern semiconductor technologies. It introduces a new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.
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This book provides a reference to one of the more challenging reliability issues plaguing modern semiconductor technologies. It introduces a new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior.
Klappentext zu „Bias Temperature Instability for Devices and Circuits “
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Inhaltsverzeichnis zu „Bias Temperature Instability for Devices and Circuits “
Introduction.- Characterization, Experimental Challenges.- Advanced Characterization.- Characterization of Nanoscale Devices.- Statistical Properties/Variability.- Theoretical Understanding.- Possible Defects: Experimental.- Possible Defects: First Principles.- Modeling.- Technological Impact.- Silicon dioxides/SiON.- High-k oxides.- Alternative technologies.- Circuits.
Bibliographische Angaben
- 2016, Softcover reprint of the original 1st ed. 2014, XI, 810 Seiten, 318 farbige Abbildungen, Maße: 16,2 x 23,7 cm, Kartoniert (TB), Englisch
- Herausgegeben: Tibor Grasser
- Verlag: Springer, Berlin
- ISBN-10: 1493955292
- ISBN-13: 9781493955299
Sprache:
Englisch
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