Embedded Flash Memory for Embedded Systems: Technology, Design for Sub-systems, and Innovations

Introduction.- Applications and Technology Trend in Embedded Flash Memory.- Overview of Embedded Flash Memory Technology.- Floating-gate 1Tr-NOR eFlash memory.- Split-Gate Floating Poly SuperFlash Memory Technology, Design and Reliability.- SONOS 1Tr eFlash memory.- SONOS split-gate eFlash memory.

Hideto Hidaka (M'00) received the B.S., M.S., and Ph.D. degrees in electronic engineering from the University of Tokyo, Tokyo, Japan, in 1981, 1983, and 1994, respectively. In 1983 he joined Mitsubishi Electric Corp. and then transferred to Renesas Technology Corp., renamed to Renesas Electronics Corp., where he is now the Chief Technology Officer and Senior Vice President of Renesas Electronics Corporation since July 1, 2015. Hidaka leads the technology strategy and technology development work of the entire Renesas Group. His extensive personal connections with leaders in the field of semiconductor technology development, his extensive track record in the field, and his experience supervising design work on the world's leading MCUs enable him to make a major contribution to the future growth of Renesas and in particular to technological innovation. Subsequently, he supervised development of microcontrollers (MCUs) with on-chip flash memory at Renesas Technology Corp. and Renesas Electronics Corporation. After joining Mitsubishi Electric Corporation as a member of the LSI Laboratory, he worked on the development of memory-related products such as DRAM and embedded DRAM (eDRAM). Hidaka has been an active member of several international scientific and technical societies in the semiconductor circuit field (including IEEE and IEICE) and served as the Chairman of the IEEE International Solid-State Circuits Conference (ISSCC), which is highly regarded in the industry as the Olympic Games of Semiconductors.