Ferroelectric-Gate Field Effect Transistor Memories

Preface
I. Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors

II. Practical Characteristics of Inorganic Ferroelectric-gate FETs

Si-Based Ferroelectric-gate Field Effect Transistors
1) Pt/SrBi2Ta2O9(SBT)/(Hf,SiO)2/Si gate structure Ferroelectric FETs
2) Pt/(SBT,BLT)/HfO2/Si gate structure Ferroelectric FETs

Thin film-Based Ferroelectric-gate Field Effect Transistors
3) ITO/PZT/LaNiO3(LNO) gate structure Ferroelectric FETs
4) ZnO/Pb(Zr,Ti)O3 gate structure Ferroelectric FETs
5) Pt/PZT/ZnO gate structure Ferroelectric FETs

III. Practical Characteristics of Organic Ferroelectric-gate FETs

Si-Based Ferroelectric-gate Field Effect Transistors
1) Polyvinylidene fluoride (PVDF)/Si structure Ferroelectric-gate FETs
2) Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferroelectric-gate FETs

Thin film-Based Ferroelectric-gate Field Effect Transistors
3) P(VDF-TrFE)/Pentacene structure Ferroelectric-gate FETs
4) P(VDF-TrFE)/oxide thin film structure Ferroelectric-gate FETs

Ferroelectric-gate Field Effect Transistors with flexible substrates
5) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on plastic substrates
6) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on paper substrates

IV. Applications and Future Prospects
1) Novel Applications to NAND-type Memory Circuits
2) Novel Applications to Non-memory Devices
3) Features of One-Transistor Type Ferroelectric-gate Field Effect Transistors

Byung-Eun Park received the B.S. and M.S. degrees from the University of Seoul, Korea, and the Ph.D. degree in applied engineering from the Tokyo Institute of Technology, Tokyo, Japan.
He is a professor at School of Electrical and Computer Engineering, University of Seoul, Korea. Prior to joining the University of Seoul in 2004, he was an assistant professor in Tokyo Institute of Technology, and had joined the R&D Association for Future Electron Devices, Japan. He has over 250 patents including pending. Now, he is a non-executive director of Korea Intellectual Property Strategy Institute and a member of Compensation Council for duty invention of Seoul Metropolitan Government. His research interests are device and process technologies in ferroelectric memories. He also interests display devices, solar cells and sensors.

Hiroshi Ishiwara was born in Japan in 1945. He received the B.S., M.S., and Ph.D. degrees in electronic engineering from Tokyo Institute of Technology, Tokyo, Japan, in 1968, 1970, and 1973, respectively.
He was with the Tokyo Institute of Technology, as Research Associate (1973-1976), Associate Professor (1976-1989), and Professor (1989-2011). In 2004 and 2005, he was the Dean of professor at Interdisciplinary Graduate School of Science and Engineering. He retired from Tokyo Institute of Technology in 2011 and he is now a Professor Emeritus. In the period from 2010 to 2013, he was a WCU (World Class University) Professor in Department of Physics, Konkuk University, Korea. His research interests are device and process technologies in integrated circuits, particularly in ferroelectric memories. He has published 450 peer-reviewed papers with total citations more than 6000.
Dr. Ishiwara was awarded the Japan IBM Science Prize in 1990, International Symposium on Integrated Ferroelectrics 2000 Honors, the Purple Ribbon Medal by Japanese Government in 2003, Certificate of Merit in Nano Research Innovation Category by Korean Deputy Prime