Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices
(Sprache: Englisch)
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of
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An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of
Inhaltsverzeichnis zu „Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices “
Preface. Introduction. 1. Recent Advances in Experimental Studies of SiO2 Films on Si. 2. Theory of the SiO2/Si and SiOxNy/Si Systems. 3. Growth Mechanism, Processing, and Analysis of (Oxy)nitridation. 4. Initial Oxidation and Surface Science Issues. 5. Electrical Properties and Microscopic Models of Defects. 6. Hydrogen/Deuterium Issues. 7. New Substrates (SiC, SiGe) and SOI Technologies. Appendix. Authors Index. List of Workshop Participants.
Bibliographische Angaben
- Softcover reprint of the original 1st ed. 1998, 520 Seiten, Maße: 15,5 x 23,5 cm, Taschenbuch, Englisch
- Herausgegeben: Eric Garfunkel, Alexander Vul', Evgeni Gusev
- Verlag: Springer Netherlands
- ISBN-10: 0792350081
- ISBN-13: 9780792350088
- Erscheinungsdatum: 31.03.1998
Sprache:
Englisch
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