Indium concentration on InGaN/GaN nanolayers quantum well
(Sprache: Englisch)
We believe that positive ion plays an important role in Indium-containing nitride compounds. Increasing indium, even in low amounts in nitride compounds, has been shown to increase the intensity of the radiation spectrum in LEDs and LDs.. This is related to...
Leider schon ausverkauft
versandkostenfrei
Buch
54.90 €
Produktdetails
Produktinformationen zu „Indium concentration on InGaN/GaN nanolayers quantum well “
Klappentext zu „Indium concentration on InGaN/GaN nanolayers quantum well “
We believe that positive ion plays an important role in Indium-containing nitride compounds. Increasing indium, even in low amounts in nitride compounds, has been shown to increase the intensity of the radiation spectrum in LEDs and LDs.. This is related to an increase in the radiation spectrum with the effect of indium. There are various results that confirm the effect of fluctuations in the indium diffusion in nitride alloys.
Autoren-Porträt von Samane Sadat Ahmadi, Seyed Ali Hashemizade
Ahmadi, Samane SadatSamaneh Sadat Ahmadi, a doctoral student in physics, is working as a research director and teacher at the Islamic Azad University of Parand. Dr. Seyyed Ali Hashemizadeh, faculty member of the Physics Department at Payam Noor University has numerous articles and books.
Bibliographische Angaben
- Autoren: Samane Sadat Ahmadi , Seyed Ali Hashemizade
- 2018, 100 Seiten, Maße: 22 cm, Kartoniert (TB), Englisch
- Verlag: LAP Lambert Academic Publishing
- ISBN-10: 6139911680
- ISBN-13: 9786139911684
Sprache:
Englisch
Kommentar zu "Indium concentration on InGaN/GaN nanolayers quantum well"
0 Gebrauchte Artikel zu „Indium concentration on InGaN/GaN nanolayers quantum well“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "Indium concentration on InGaN/GaN nanolayers quantum well".
Kommentar verfassen