Physical and Chemical Aspects of Organic Electronics

1. Contact effects in CuTCNQ memory devices (A.Hefczyc et al.)

2. Carbon nanotube transistors: Chemical functionalization and characterization (K.Balasubramanian et al.)

3. Dielectric layers for organic field effect transistors as gate dielectric and surface passivation (T.Diekmann et al.)

4. Microscopic and spectroscopic characterization of interfaces and dielectric layers in OFET stacks (K.Müller et al.)

5. Pentacene devices: molecular structure, charge transport and photo response (B.Nickel et al.)

6. Ambipolar charge carrier transport in organic semiconductor blends (M.Bronner et al.)

7. Hysteresis in polymer field-effect transistors: Measured effects and bipolaron and trap mechanisms (G.Paasch et al.)

8. Aspects of the charge carrier transport in highly-ordered crystals of polyaromatic molecules (J.Pflaum et al.)

9. X-ray investigation of the thickness dependence of the crystalline structure of thin films of low and high molecular weigth Poly(3-hexylthiophene) (S.Joshi et al.)

10. Preparation and characterization of anodic Al2O3 films useful as gate dielectrics for organic transistors on flexible substrates (Richter, Dang et al.)

11. The role of the dielectric/semiconductor interface for the electric characteristics of organic field effect transistors (N.Benson et al.)

12. In-situ X-ray scattering studies of OFET interfaces (A.Gerlach et al.)

13. Bonding, structure and function of thin organic layers on metal surfaces (F.S.Tautz et al.)

14. Novel organic semiconductors and processing techniques for organic field-effect transistors (H.Nok Tsao et al.)

15. Deposition and characterization of thin organic films on metals for application in organic electronics (G.Witte, C.Wöll)

16. Potentiometry measurements to evaluate the influence of contacts in top and bottom configuration pentacene OFETs (R.Scholz et al.)

17. Metal/Organic interface formation studied in situ by raman spectroscopy (G.Salvan et al.)

18.

Christof Wöll studied physics at the Georg-August University in Göttingen, Germany, and received his Ph.D. degree from the Max-Planck-Institute for Flow Research in 1987. From 1988 to 1989, he worked as a postdoctoral fellow at the IBM Division in San Jose, USA, researching in scanning tunnelling microscopy of clean and adsorbate covered metal surfaces. In 1992 followed his Habilitation in Physics from the University of Heidelberg, where he lectured in physical chemistry. From 1994 to 1996, Professor Wöll was a Heisenberg Fellow of the Deutsche Forschungsgemeinschaft at the Institute of Physical Chemistry, University of Heidelberg. He has published over 180 articles and is a member of the editorial boards of several journals.