Porous Silicon Carbide and Gallium Nitride
Epitaxy, Catalysis, and Biotechnology Applications
(Sprache: Englisch)
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an...
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Klappentext zu „Porous Silicon Carbide and Gallium Nitride “
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more
Inhaltsverzeichnis zu „Porous Silicon Carbide and Gallium Nitride “
1. Porous SiC Preparation, Characterization and Morphology1.1 Introduction
1.2 Triangular Porous Morphology in n-type 4H-SiC
1.3 Nano-columnar Pore Formation in 6H SiC
1.4 Summary
Acknowledgements
References
2. Processing Porous SiC: Diffusion, Oxidation, Contact Formation
2.1 Introduction
2.2 Formation of Porous Layer
2.3 Diffusion in Porous SiC
2.4 Oxidation
2.5 Contacts to Porous SiC
Acknowledgments
References
3. Growth of SiC on Porous SiC Buffer Layers
3.1 Introduction
3.2 SiC CVD Growth
3.3 Growth of 3C-SiC on porous Si via Cold-Wall Epitaxy
3.4 Growth of 3C-SiC on Porous 3C-SiC
3.5 Growth of 4H-SiC on Porous 4H-SiC
3.6 Conclusion
Acknowledgements
References
4. Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching
4.1 Introduction
4.2 Creation of Porous GaN by Electroless Etching
4.3 Morphology Characterization
4.4 Luminescence of Porous GaN
4.5 Raman Spectroscopy of Porous GaN
4.6 Summary and Conclusions
Acknowledgments
References
5. Growth of GaN on Porous SiC by Molecular Beam Epitaxy
5.1 Introduction
5.2 Morphology and Preparation of Porous SiC substrates
5.3 MBE growth of GaN on Porous SiC Substrates
5.4 Summary
Acknowledgments
References
6. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC
6.1 Introduction
6.2 Epitaxy of GaN on Porous SiNx Network
6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN
6.4 Growth of GaN on Porous SiC
Acknowledgements
References
7. HVPE Growth of GaN on Porous SiC substrates
7.1 Introduction
7.2 Porous Si Substrate Fabrication and Properties
7.3 Epitaxial Growth of GaN Films on Porous SiC Substrates
Summary
References
8. Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers
8.1 Introduction
8.2 Extended Defects In Epitaxially Grown GaN Thin Layers
8.3 Dislocation Mechanisms in Conventional
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Lateral Epitaxy Overgrowth of GaN
8.4 Growth of GaN on Porous SiC Substrates
8.5 Growth of GaN on Porous SiN and TiN Interlayers
8.6 Summary
Acknowledgments
References
9. Electrical Properties of Porous SiC
9.1 Introduction
9.2 Resistivity and Hall Effect
9.3 Deep Level Transient Spectroscopy
9.4 Sample Considerations
9.5 Potential Energy Near a Pore
9.6 DLTS Data and Analysis
References
10. Magnetism of Transition Metal Doped GaN Nanostructures
10.1 Introduction
10. 2 Mn-Doped GaN Crystal
10. 3 Mn-Doped GaN Thin Films
10.4 Mn- and Cr-Doped GaN One-Dimensional Structures
10.5 N-Doped Mn and Cr C Clusters
10.6 Summary
Acknowledgement
References
11 SiC Catalysis Technology
11.1 Introduction
11.2 Silicon Carbide Support
11.3 Heat Effects during Reaction
11.4 Reactions on SiC as Catalytic Supports
11.5 Examples of SiC Catalyst Applications
11.6 Prospects and Conclusions
References
12. Nanoporous Silicon Carbide as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations
12. 1. The Rationale for Implantable Semi-Permeable Materials
12. 2. The Biology of Soluble Signaling Proteins in Tissue
12. 3. Measuring Cytokine Secretion In Living Tissues and Organs
12.4. Creating a Biocompatible Tissue - Device Interface: Advantages of Silicon Carbide
12.5. The Testing of SiC Membranes for Permeability of Proteins
12.6. Improving the Structure of SiC Membranes for Biosensor Interfaces
12.7. Theoretical Considerations: Modeling Diffusion through a Porous Membrane
12.8. Future Development: Marriage of Membrane and Microchip
12.9. Conclusions Acknowledgments
References
8.4 Growth of GaN on Porous SiC Substrates
8.5 Growth of GaN on Porous SiN and TiN Interlayers
8.6 Summary
Acknowledgments
References
9. Electrical Properties of Porous SiC
9.1 Introduction
9.2 Resistivity and Hall Effect
9.3 Deep Level Transient Spectroscopy
9.4 Sample Considerations
9.5 Potential Energy Near a Pore
9.6 DLTS Data and Analysis
References
10. Magnetism of Transition Metal Doped GaN Nanostructures
10.1 Introduction
10. 2 Mn-Doped GaN Crystal
10. 3 Mn-Doped GaN Thin Films
10.4 Mn- and Cr-Doped GaN One-Dimensional Structures
10.5 N-Doped Mn and Cr C Clusters
10.6 Summary
Acknowledgement
References
11 SiC Catalysis Technology
11.1 Introduction
11.2 Silicon Carbide Support
11.3 Heat Effects during Reaction
11.4 Reactions on SiC as Catalytic Supports
11.5 Examples of SiC Catalyst Applications
11.6 Prospects and Conclusions
References
12. Nanoporous Silicon Carbide as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations
12. 1. The Rationale for Implantable Semi-Permeable Materials
12. 2. The Biology of Soluble Signaling Proteins in Tissue
12. 3. Measuring Cytokine Secretion In Living Tissues and Organs
12.4. Creating a Biocompatible Tissue - Device Interface: Advantages of Silicon Carbide
12.5. The Testing of SiC Membranes for Permeability of Proteins
12.6. Improving the Structure of SiC Membranes for Biosensor Interfaces
12.7. Theoretical Considerations: Modeling Diffusion through a Porous Membrane
12.8. Future Development: Marriage of Membrane and Microchip
12.9. Conclusions Acknowledgments
References
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Autoren-Porträt von Randall M. Feenstra, Colin E. C. Wood
1. Porous SiC Preparation, Characterization and Morphology1.1 Introduction1.2 Triangular Porous Morphology in n-type 4H-SiC1.3 Nano-columnar Pore Formation in 6H SiC1.4 SummaryAcknowledgementsReferences2. Processing Porous SiC: Diffusion, Oxidation, Contact Formation2.1 Introduction2.2 Formation of Porous Layer2.3 Diffusion in Porous SiC2.4 Oxidation2.5 Contacts to Porous SiCAcknowledgmentsReferences3. Growth of SiC on Porous SiC Buffer Layers3.1 Introduction3.2 SiC CVD Growth3.3 Growth of 3C-SiC on porous Si via Cold-Wall Epitaxy3.4 Growth of 3C-SiC onPorous 3C-SiC3.5 Growth of 4H-SiC on Porous 4H-SiC3.6 ConclusionAcknowledgementsReferences4. Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching4.1 Introduction4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization4.4 Luminescence of Porous GaN4.5 Raman Spectroscopy of Porous GaN4.6 Summary and ConclusionsAcknowledgmentsReferences5. Growth of GaN on Porous SiC by Molecular Beam Epitaxy5.1 Introduction5.2 Morphology and Preparation of Porous SiC substrates5.3 MBE growth of GaN on Porous SiC Substrates5.4 SummaryAcknowledgmentsReferences6. GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC6.1 Introduction6.2 Epitaxy of GaN on Porous SiNx Network6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.4 Growth of GaN on Porous SiCAcknowledgementsReferences7. HVPE Growth of GaN on Porous SiC substrates7.1 Introduction7.2 Porous Si Substrate Fabrication and Properties7.3 Epitaxial Growth of GaN Films on Porous SiC SubstratesSummaryReferences8. Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers8.1 Introduction8.2 Extended Defects In Epitaxially Grown GaN Thin Layers8.3 Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN8.4 Growth of GaN on Porous SiC Substrates8.5 Growth of GaN on Porous SiN and TiN Interlayers8.6 SummaryAcknowledgmentsReferences9. Electrical Properties of Porous SiC9.1 Introduction9.2
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Resistivity and Hall Effect9.3 Deep Level Transient Spectroscopy9.4 Sample Considerations9.5 Potential Energy Near a Pore9.6 DLTS Data and AnalysisReferences10. Magnetism of Transition Metal Doped GaN Nanostructures10.1 Introduction10. 2 Mn-Doped GaN Crystal10. 3 Mn-Doped GaN Thin Films10.4 Mn- and Cr-Doped GaN One-Dimensional Structures10.5 N-Doped Mn and Cr C Clusters10.6 SummaryAcknowledgementReferences11 SiC Catalysis Technology11.1 Introduction11.2 Silicon Carbide Support11.3Heat Effects during Reaction11.4 Reactions on SiC as Catalytic Supports11.5 Examples of SiC Catalyst Applications11.6 Prospects and ConclusionsReferences12. Nanoporous Silicon Carbide as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations12. 1. The Rationale for Implantable Semi-Permeable Materials12. 2. The Biology of Soluble Signaling Proteins in Tissue12. 3. Measuring Cytokine Secretion In Living Tissues and Organs12.4. Creating a Biocompatible Tissue - Device Interface: Advantages of Silicon Carbide12.5. The Testing of SiC Membranes for Permeability of Proteins12.6. Improving the Structure of SiC Membranes for Biosensor Interfaces12.7. Theoretical Considerations: Modeling Diffusion through a Porous Membrane12.8. Future Development: Marriage of Membrane and Microchip12.9. Conclusions AcknowledgmentsReferences
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Bibliographische Angaben
- Autoren: Randall M. Feenstra , Colin E. C. Wood
- 2008, 1. Auflage, 328 Seiten, Maße: 22,9 cm, Gebunden, Englisch
- Verlag: Wiley & Sons
- ISBN-10: 0470517522
- ISBN-13: 9780470517529
- Erscheinungsdatum: 28.03.2008
Sprache:
Englisch
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