von Oehsen, S: Spin-Polarized Currents for Spintronic Device

The emerging ?eld of spintronics deals with the control and manipulation of the spin of the elec¬trons rather than the charge. The ?rst chapter of this thesis gives an overview of the areas of research in spintronics and puts the goals of the present work into the perspective of the work on spintronic devices. Amongst others, the generation of highly spin-polarized currents, i.e., currents with a nonequilibrium spin population, is of high importance for spintronics. In this thesis two different approaches to the generation of spin-polarized currents are investigated. In the second chapter the ferromagnetic Heusler alloy Ni2MnIn is investigated. It is a candidate as a half-metallic spin-injector. We use point-contact Andreev re?ection as a method to determine the spin polariza¬tion of thin ?lms of Ni2MnIn. A detailed description of the theoretical basics of the method is given. The setup for this technique has been optimized within this work. Measurements are per¬formed on Au, Ni, and Ni2MnIn ?lms. The experimental data is analyzed using three different the¬oretical models. Chapter 3 deals with an alternative approach to generate spin-polarized currents: the realization of a full-semiconductor spin ?lter. In such a device the spin polarization originates from the spin-orbit interaction in the two-dimensional electron gas in an InAs heterostructure. To obtain one-dimensional electron channels in the ?lter we have designed quantum point contacts. The chapter is divided into one part that presents the theoretical basics of quantum point contacts and of spin ?lters and a second part that gives the experimental results. The thesis ends with a conclusion and an outlook.