Imperfections and Active Centres in Semiconductors (PDF)
International Series of Monographs on Semiconductors, Vol. 6
(Sprache: Englisch)
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental...
sofort als Download lieferbar
eBook (pdf)
54.95 €
27 DeutschlandCard Punkte sammeln
- Lastschrift, Kreditkarte, Paypal, Rechnung
- Kostenloser tolino webreader
Produktdetails
Produktinformationen zu „Imperfections and Active Centres in Semiconductors (PDF)“
Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.
Bibliographische Angaben
- Autor: R. G. Rhodes
- 2014, 386 Seiten, Englisch
- Herausgegeben: Heinz K. Henisch
- Verlag: Elsevier Science & Techn.
- ISBN-10: 1483222810
- ISBN-13: 9781483222813
- Erscheinungsdatum: 12.05.2014
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
eBook Informationen
- Dateiformat: PDF
- Größe: 23 MB
- Mit Kopierschutz
- Vorlesefunktion
Sprache:
Englisch
Kopierschutz
Dieses eBook können Sie uneingeschränkt auf allen Geräten der tolino Familie lesen. Zum Lesen auf sonstigen eReadern und am PC benötigen Sie eine Adobe ID.
Kommentar zu "Imperfections and Active Centres in Semiconductors"
0 Gebrauchte Artikel zu „Imperfections and Active Centres in Semiconductors“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "Imperfections and Active Centres in Semiconductors".
Kommentar verfassen