SiGe Heterojunction Bipolar Transistors (PDF)
(Sprache: Englisch)
SiGe HBTs is a hot topic within the microelectronics community
because of its applications potential within integrated circuits
operating at radio frequencies. Applications range from high speed
optical networking to wireless communication...
because of its applications potential within integrated circuits
operating at radio frequencies. Applications range from high speed
optical networking to wireless communication...
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SiGe HBTs is a hot topic within the microelectronics community
because of its applications potential within integrated circuits
operating at radio frequencies. Applications range from high speed
optical networking to wireless communication devices.
The addition of germanium to silicon technologies to form
silicon germanium (SiGe) devices has created a revolution in the
semiconductor industry. These transistors form the enabling
devices in a wide range of products for wireless and wired
communications.
This book features:
* SiGe products include chip sets for wireless cellular handsets
as well as WLAN and high-speed wired network applications
* Describes the physics and technology of SiGe HBTs, with
coverage of Si and Ge bipolar transistors
* Written with the practising engineer in mind, this book
explains the operating principles and applications of bipolar
transistor technology.
Essential reading for practising microelectronics engineers and
researchers.
Also, optical communications engineers and communication
technology engineers. An ideal reference tool for masters level
students in microelectronics and electronics engineering.
because of its applications potential within integrated circuits
operating at radio frequencies. Applications range from high speed
optical networking to wireless communication devices.
The addition of germanium to silicon technologies to form
silicon germanium (SiGe) devices has created a revolution in the
semiconductor industry. These transistors form the enabling
devices in a wide range of products for wireless and wired
communications.
This book features:
* SiGe products include chip sets for wireless cellular handsets
as well as WLAN and high-speed wired network applications
* Describes the physics and technology of SiGe HBTs, with
coverage of Si and Ge bipolar transistors
* Written with the practising engineer in mind, this book
explains the operating principles and applications of bipolar
transistor technology.
Essential reading for practising microelectronics engineers and
researchers.
Also, optical communications engineers and communication
technology engineers. An ideal reference tool for masters level
students in microelectronics and electronics engineering.
Inhaltsverzeichnis zu „SiGe Heterojunction Bipolar Transistors (PDF)“
Preface. Physical Constants Properties of Silicon and Silicon-Germanium. List of Symbols. 1. Introduction. 2. Basic Bipolar Transistor Theory. 3. Heavy Doping Effects. 4. Second-Order Effects. 5. High-Frequency Performance. 6. Polysilicon Emitters. 7. Properties and Growth of Silicon-Germanium. 8. Silicon-Germanium Heterojunction Bipolar Transistors. 9. Silicon Bipolar Technology. 10. Silicon-Germanium Heterojunction Bipolar Technology. 11. Compact Models of Bipolar Transistors. 12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies. References. Index.
Autoren-Porträt von Peter Ashburn
Professor Ashburn has worked as an industrial engineer, a consultant and a university professor and has accumulated a wealth of practical knowledge for incorporation in this book.
Bibliographische Angaben
- Autor: Peter Ashburn
- 2003, 1. Auflage, 286 Seiten, Englisch
- Verlag: John Wiley & Sons
- ISBN-10: 0470090731
- ISBN-13: 9780470090732
- Erscheinungsdatum: 18.12.2003
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
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Englisch
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