Crystal Growth Technology

Contributors.
 
Preface.
 
PART 1: GENERAL ASPECTS OF CRYSTAL GROWTH TECHNOLOGY.
 
1. The Development of Crystal Growth Technology (H. J. ScheelI).
 
Abstract.
 
References.
 
2. Thermodynamic Fundamentals of Phase Transitions Applied to Crystal Growth Processes (P. Rudolph).
 
References.
 
3. Interface-kinetics-driven Facet Formation During Melt Growth of Oxide Crystals (S. Brandon, A. Virozub and Y. Liu).
 
Abstract.
 
Acknowledgments.
 
Note Added in Proof.
 
References.
 
4. Theoretical and Experimental Solutions of the Striation Problem (H. J. Scheel).
 
Abstract.
 
References.
 
5. High-resolution X-Ray Diffraction Techniques for Structural Characterization of Silicon and other Advanced Materials (K. Lal).
 
References.
 
6. Computational Simulations of the Growth of Crystals from Liquids (A. Yeckel and J. J. Derby).
 
Acknowledgments.
 
References.
 
7. Heat and Mass Transfer under Magnetic Fields (K. Kakimoto).
 
Abstract.
 
Acknowledgment.
 
References.
 
8. Modeling of Technologically Important Hydrodynamics and Heat/Mass Transfer Processes during Crystal Growth (V. I. Polezhaev).
 
Acknowledgments.
 
References.
 
PART 2: SILICON.
 
9. Influence of Boron Addition on Oxygen Behavior in Silicon Melts (K. Terashima).
 
Abstract.
 
Acknowledgments.
 
References.
 
10. Octahedral Void Defects in Czochralski Silicon (M. Itsumi).
 
References.
 
11. The Control and Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals (R. Falster, V. V. Voronkov and P. Mutti).
 
Abstract.
 
Acknowledgments.
 
References.
 
12. The Formation of Defects and Growth Interface Shapes in CZ Silicon (T. Abe).
 
Abstract.
 
References.
 
13. Silicon Crystal Growth for Photovoltaics