Defects in High-K Gate Dielectric Stacks
Nano-Electronic Semiconductor Devices
(Sprache: Englisch)
The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to...
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The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Inhaltsverzeichnis zu „Defects in High-K Gate Dielectric Stacks “
- High-k Technology. PVD-High-k Gate Dielectrics with FUSI Gate and Influence of PDA Treatment on On-state Drive Current- Extremely High Density Capacitors with ALD High-k Dielectric Layers
- Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks
- Defects In High-K Dielectrics: Characterization. On the Characterization of Electronically Active Defects in High-k Gate Dielectrics
- Inelastic Electron Tunnelling Spectroscopy (IETS) Study of High-k Dielectrics
- Characterization and Modeling of Defects in High-k Layers Through Fast Electrical Transient Measurements
- Characterization of Electrically Active Defects in High-k Gate Dielectrics Using Charge Pumping
- Impact of High-k Properties on MOSFET Electrical Characteristics
- High-K Processing and Defects. Structural Evolution and Point Defects in Metal Oxide-based High-k Gate Dielectrics
- Disordered Structure and Density of Gap States in High-Permittivity Thin Solid Films
- Interdiffusion Studies of High-k Gate Dielectric Stack Constituents
- XPS/LEIS Study of High-k Rare Earth (Lu, Yb) Oxides and Silicates on Si: The Effect of Annealing on Microstructure Evolution
- Transient Charging Effects and Its Implications to The Reliability of High-k Dielectrics
- High-k Theory. Defect Energy Levels in High-k Gate Oxides
- Defect-related Issues in High-k Dielectrics
- Studying The Effects of Nitrogen and Hafnium Incorporation into The SiO2/Si(100) Interface with Replica-exchange Molecular Dynamics and Density-Functional-Theory Calculations
- Electrically Active Defects. Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100)Si by Electron Spin Resonance: Interfaces and N Incorporation
- Mechanism of Charge Trapping Reduction in Scaled High-k Gate Stacks
- Electrically Active Interface and Bulk Semiconductor Defects in High-k / Germanium Structures
- Defect and Composition Analysis of
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As-deposited and Nitrided (100)Si / SiO2/ Hf1-xSixO2 Stacks by Electron Paramagnetic Resonance and Ion Beam Analysis
- Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies
- Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks
- Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment
- The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics
- Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics
- Low Substrate Damage High-k Removal After Gate Patterning
- Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy
- Interfaces. Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon
- Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon
- Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces
- Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100)
- The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions). Preparation, Evolution, Passivation
- Processing, Characterization and Devices. Correlation Between Defects, Leakage Currents and Conduction Mechanisms in Thin High-k Dielectric Layers
- Electronic Structure of ZrO2 and HfO2
- High-k Gate Stacks Electrical Characterization at The Nanoscale Using Conductive-AFM
- Magnetic Defects in Pristine and Hydrogen-Terminated Nanodiamonds
- On the Importance of Atomic Packing in Determining Dielectric Permittivities
- Investigation of The Electronic Properties of Thin Dielectric Films by Scanning Probe Microscopy
- Subject Index. Author Index. List of Workshop Participants
- Defects at The High-k /Semiconductor Interfaces Investigated By Spin Dependent Spectroscopies
- Fixed Oxide Charge in Ru-based Chemical Vapour Deposited High-k Gate Stacks
- Electrical Defects in Atomic Layer Deposited HfO2 Films on Silicon: Influence of Precursor Chemistries and Substrate Treatment
- The Effects of Radiation and Charge Trapping on The Reliability of Alternative Gate Dielectrics
- Can LEIS Spectra Contain Information on Surface Electronic Structure of High-k Dielectrics
- Low Substrate Damage High-k Removal After Gate Patterning
- Monitoring of Fermi Level Variations at Metal/High-k Interfaces with in situ X-ray Photoelectron Spectroscopy
- Interfaces. Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-k Materials on Silicon
- Interface Formation During Epitaxial Growth of Binary Metal Oxides on Silicon
- Chemical Environment and Strain on Oxygen Vacancy Formation Energies at Silicon-Silicon Oxide Interfaces
- Dielectric and Infrared Properties of Ultrathin SiO2 Layers on Si (100)
- The (1 0 0) Surface of Semiconductor Silicon (in Practical Conditions). Preparation, Evolution, Passivation
- Processing, Characterization and Devices. Correlation Between Defects, Leakage Currents and Conduction Mechanisms in Thin High-k Dielectric Layers
- Electronic Structure of ZrO2 and HfO2
- High-k Gate Stacks Electrical Characterization at The Nanoscale Using Conductive-AFM
- Magnetic Defects in Pristine and Hydrogen-Terminated Nanodiamonds
- On the Importance of Atomic Packing in Determining Dielectric Permittivities
- Investigation of The Electronic Properties of Thin Dielectric Films by Scanning Probe Microscopy
- Subject Index. Author Index. List of Workshop Participants
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Bibliographische Angaben
- 2006, 503 Seiten, Maße: 15,9 x 24,3 cm, Kartoniert (TB), Englisch
- Herausgegeben: Evgeni Gusev
- Verlag: Springer, Berlin
- ISBN-10: 140204366X
- ISBN-13: 9781402043666
Sprache:
Englisch
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