Electrothermal Analysis of VLSI Systems
(Sprache: Englisch)
This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI...
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Klappentext zu „Electrothermal Analysis of VLSI Systems “
This useful book addresses electrothermal problems in modern VLSI systems. It discusses electrothermal phenomena and the fundamental building blocks that electrothermal simulation requires. The authors present three important applications of VLSI electrothermal analysis: temperature-dependent electromigration diagnosis, cell-level thermal placement, and temperature-driven power and timing analysis.
Inhaltsverzeichnis zu „Electrothermal Analysis of VLSI Systems “
List of Figures. List of Tables. Preface. Acknowledgments. Part I: The Building Blocks. 1. Introduction. 2. Power Analysis for CMOS Circuits. 3. Temperature-Dependent MOS Device Modeling. 4. Thermal Simulation for VLSI Systems. 5. Fast-Timing Electrothermal Simulation. Part II: The Applications. 6. Temperature-Dependent Electromigration Reliability. 7. Temperature-Driven Cell Placement. 8. Temperature Driven Power and Timing Analysis. Index.
Bibliographische Angaben
- Autoren: Yi-Kan Cheng , Ching-Han Tsai , Chin-Chi Teng
- 2000, 2002., 210 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer Netherlands
- ISBN-10: 079237861X
- ISBN-13: 9780792378617
- Erscheinungsdatum: 30.06.2000
Sprache:
Englisch
Rezension zu „Electrothermal Analysis of VLSI Systems “
From the Foreword: `Continuing increases in the levels of circuit integration and concomitant increases in performance are sustaining the trend of increasing power dissipation in VLSI systems. A consequence is that the impact of temperature on the successful operation and reliability of devices must be comprehended during the design process.....This text provides a comprehensive formulation of the electrothermal analysis problem beginning with a summary of the sources of power dissipation in CMOS circuits and followed by a formulation of the effect of temperature on MOS devices.' Dr. Ralph K. Cavin, Vice President, Semiconductor Research Corporation
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