GaN Transistors for Efficient Power Conversion
(Sprache: Englisch)
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been...
This updated, third edition of a popular book on GaN transistors for efficient power conversion has been...
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Klappentext zu „GaN Transistors for Efficient Power Conversion “
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems designThis updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices.
GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout.
* Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications
* Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar
* Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors
* A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art
GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller,
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and more cost-effective products using GaN transistors.
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Inhaltsverzeichnis zu „GaN Transistors for Efficient Power Conversion “
Foreword xvAcknowledgments xvii
1 GaN Technology Overview 1
1.1 Silicon Power Metal Oxide Silicon Field Effect Transistors 1976-2010 1
1.2 The Gallium Nitride Journey Begins 2
1.3 GaN and SiC Compared with Silicon 2
1.3.1 Bandgap (Eg) 3
1.3.2 Critical Field (Ecrit) 3
1.3.3 On-Resistance (RDS(on)) 4
1.3.4 The Two-Dimensional Electron Gas (2DEG) 4
1.4 The Basic GaN Transistor Structure 6
1.4.1 Recessed Gate Enhancement-Mode Structure 7
1.4.2 Implanted Gate Enhancement-Mode Structure 8
1.4.3 pGaN Gate Enhancement-Mode Structure 8
1.4.4 Hybrid Normally Off Structures 8
1.4.5 Reverse Conduction in HEMT Transistors 10
1.5 Building a GaN Transistor 11
1.5.1 Substrate Material Selection 11
1.5.2 Growing the Heteroepitaxy 12
1.5.3 Processing the Wafer 12
1.5.4 Making Electrical Connection to the Outside World 13
1.6 GaN Integrated Circuits 15
1.7 Summary 21
References 21
2 GaN Transistor Electrical Characteristics 25
2.1 Introduction 25
2.2 Device Ratings 25
2.2.1 Drain-Source Voltage 25
2.3 On-Resistance (RDS(on)) 30
2.4 Threshold Voltage 33
2.5 Capacitance and Charge 34
2.6 Reverse Conduction 37
2.7 Summary 39
References 40
3 Driving GaN Transistors 41
3.1 Introduction 41
3.2 Gate Drive Voltage 44
3.3 Gate Drive Resistance 45
3.4 Capacitive Current-Mode Gate Drive Circuits for Gate Injection Transistors 46
3.5 dv/dt Considerations 48
3.5.1 Controlling dv/dt at Turn-On 48
3.5.2 Complementary Device Turn-On 49
3.6 di/dt Considerations 51
3.6.1 Device Turn-On and Common-Source Inductance 51
3.6.2 Off-State Device di/dt 53
3.7 Bootstrapping and Floating Supplies 54
3.8
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Transient Immunity 57
3.9 High-Frequency Considerations 59
3.10 Gate Drivers for Enhancement-Mode GaN Transistors 60
3.11 Cascode, Direct-Drive, and Higher-Voltage Configurations 60
3.11.1 Cascode Devices 60
3.11.2 Direct-Drive Devices 63
3.11.3 Higher-Voltage Configurations 64
3.12 Summary 64
References 65
4 Layout Considerations for GaN Transistor Circuits 69
4.1 Introduction 69
4.2 Minimizing Parasitic Inductance 69
4.3 Conventional Power-Loop Designs 72
4.3.1 Lateral Power-Loop Design 72
4.3.2 Vertical Power-Loop Design 73
4.4 Optimizing the Power Loop 74
4.4.1 Impact of Integration on Parasitics 75
4.5 Paralleling GaN Transistors 76
4.5.1 Paralleling GaN Transistors for a Single Switch 76
4.5.2 Paralleling GaN Transistors for Half-Bridge Applications 79
4.6 Summary 83
References 83
5 Modeling and Measurement of GaN Transistors 85
5.1 Introduction 85
5.2 Electrical Modeling 85
5.2.1 Basic Modeling 85
5.2.2 Limitations of Basic Modeling 88
5.2.3 Limitations of Circuit Simulation 90
5.3 Measuring GaN Transistor Performance 91
5.3.1 Voltage Measurement Requirements 94
5.3.2 Probing and Measurement Techniques 96
5.3.3 Measuring Non-Ground-Referenced Signals 99
5.3.4 Current Measurement Requirement 100
5.4 Summary 101
References 102
6 Thermal Management 105
6.1 Introduction 105
6.2 Thermal Equivalent Circuits 105
3.9 High-Frequency Considerations 59
3.10 Gate Drivers for Enhancement-Mode GaN Transistors 60
3.11 Cascode, Direct-Drive, and Higher-Voltage Configurations 60
3.11.1 Cascode Devices 60
3.11.2 Direct-Drive Devices 63
3.11.3 Higher-Voltage Configurations 64
3.12 Summary 64
References 65
4 Layout Considerations for GaN Transistor Circuits 69
4.1 Introduction 69
4.2 Minimizing Parasitic Inductance 69
4.3 Conventional Power-Loop Designs 72
4.3.1 Lateral Power-Loop Design 72
4.3.2 Vertical Power-Loop Design 73
4.4 Optimizing the Power Loop 74
4.4.1 Impact of Integration on Parasitics 75
4.5 Paralleling GaN Transistors 76
4.5.1 Paralleling GaN Transistors for a Single Switch 76
4.5.2 Paralleling GaN Transistors for Half-Bridge Applications 79
4.6 Summary 83
References 83
5 Modeling and Measurement of GaN Transistors 85
5.1 Introduction 85
5.2 Electrical Modeling 85
5.2.1 Basic Modeling 85
5.2.2 Limitations of Basic Modeling 88
5.2.3 Limitations of Circuit Simulation 90
5.3 Measuring GaN Transistor Performance 91
5.3.1 Voltage Measurement Requirements 94
5.3.2 Probing and Measurement Techniques 96
5.3.3 Measuring Non-Ground-Referenced Signals 99
5.3.4 Current Measurement Requirement 100
5.4 Summary 101
References 102
6 Thermal Management 105
6.1 Introduction 105
6.2 Thermal Equivalent Circuits 105
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Autoren-Porträt von Alex Lidow, Michael de Rooij, Johan Strydom, David Reusch, John Glaser
Alex Lidow, Ph.D., is CEO of Efficient Power Conversion Corporation (EPC), USA.Michael de Rooij, Ph.D., is Vice President of Applications Engineering at EPC Corporation, USA.
Johan Strydom, Ph.D., is Advanced Development Manager, Kilby Labs, Texas Instruments, USA.
David Reusch, Ph.D., is Principal Scientist, VPT, Inc., USA.
John Glaser is Director, Applications Engineering, EPC Corporation, USA.
Bibliographische Angaben
- Autoren: Alex Lidow , Michael de Rooij , Johan Strydom , David Reusch , John Glaser
- 2019, 3. Aufl., 384 Seiten, Maße: 17,5 x 25 cm, Gebunden, Englisch
- Verlag: Wiley & Sons
- ISBN-10: 1119594146
- ISBN-13: 9781119594147
- Erscheinungsdatum: 20.09.2019
Sprache:
Englisch
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