Generic Memristor:
Global Dynamics, Basins of Attraction, and Coexisting Dynamic Attractors
(Sprache: Englisch)
An in-depth and rigorous mathematical analysis is conducted on a family of nonlinear dynamical circuits of first order generic Chua Corsage (CC) memristor.When connected across a DC battery, CC memristor exhibits two asymptotically-stable equilibrium points...
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An in-depth and rigorous mathematical analysis is conducted on a family of nonlinear dynamical circuits of first order generic Chua Corsage (CC) memristor.When connected across a DC battery, CC memristor exhibits two asymptotically-stable equilibrium points on its dynamic route map (DRM) and generates a highly nonlinear contiguous locally active DC V-I curve. The unicursal fixed point loci and the DC V-I curve can also be expressed analytically by 2 exact explicit parametric equations, which rarely happens. When connected in series with a battery and external inductance (L ), the resulting circuit exhibits a unique stable limit cycle spawn from a supercritical Hopf bifurcation by invoking the local activity principle and proving the edge of chaos property. When connected across a sinusoidal voltage source, CC memristor exhibits two coexisting dynamic attractors of an associated non-autonomous nonlinear differential equation, and two corresponding coexisting pinched hysteresis loops. The existence of two coexisting dynamic attractors with explicit formulas and their basins of attraction are truly a remarkable example for future researchers on non-autonomous systems.
Autoren-Porträt von Zubaer Mannan, Hyongsuk Kim
Mannan, ZubaerZubaer Mannan received Ph.D. in Electronics engineering from Chonbuk National University (CBNU) in 2019 and currently working as a Research Professor in CBNU. Hyongsuk Kim received the Ph.D. degree in Electrical engineering from University of Missouri, USA, in 1992. Since 1993, he has been a Professor with Division of Electronics Engineering, CBNU.
Bibliographische Angaben
- Autoren: Zubaer Mannan , Hyongsuk Kim
- 2020, 88 Seiten, Maße: 22 cm, Kartoniert (TB), Englisch
- Verlag: LAP Lambert Academic Publishing
- ISBN-10: 6202531398
- ISBN-13: 9786202531399
Sprache:
Englisch
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