Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
(Sprache: Englisch)
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced...
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Produktinformationen zu „Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy “
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Klappentext zu „Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy “
The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion.It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Inhaltsverzeichnis zu „Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy “
Basics of MBE growth.- Doping and impurity segregation effects in MBE.- Influence of strain in the epitaxial film on surface-phase equilibria.- II-VI materials.- Conclusion.
Bibliographische Angaben
- Autor: Nikolai N. Ledentsov
- 1999, 108 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer Berlin Heidelberg
- ISBN-10: 3540657940
- ISBN-13: 9783540657941
- Erscheinungsdatum: 02.07.1999
Sprache:
Englisch
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