Handbook of Nitride Semiconductors and Devices: Vol.2 Electronic and Optical Processes in Wide Band Gap Semiconductors
(Sprache: Englisch)
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and...
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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric field, low- and high-magnetic field for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 2 deals with the electrical and optical properties of nitride materials.
Inhaltsverzeichnis zu „Handbook of Nitride Semiconductors and Devices: Vol.2 Electronic and Optical Processes in Wide Band Gap Semiconductors “
Metal Contacts to GaN and Processing.- Determination of Impurity and Carrier Concentrations.
- Carrier Transport in Semiconductors.
- The p- n Junction.
- Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures
Bibliographische Angaben
- 2007, 800 Seiten, 10 farbige Abbildungen, 1000 Schwarz-Weiß-Abbildungen, Maße: 23,5 cm, Gebunden, Englisch
- Verlag: Springer Berlin
- ISBN-10: 3540469281
- ISBN-13: 9783540469285
Sprache:
Englisch
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