Impact Ionization in Presence of Electric and Magnetic Fields
Measurement of Ionization Rate of Charge Carriers in 4H-SiC in Presence of both Electric and Magnetic Fields
(Sprache: Englisch)
Both the theoretical and experimental studies on the impact ionization phenomena under electric and magnetic fields are the primary subject matter of this book. Detailed theoretical modelling of impact ionization phenomena and consequent breakdown of a p-n...
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Klappentext zu „Impact Ionization in Presence of Electric and Magnetic Fields “
Both the theoretical and experimental studies on the impact ionization phenomena under electric and magnetic fields are the primary subject matter of this book. Detailed theoretical modelling of impact ionization phenomena and consequent breakdown of a p-n junction have been presented. The theories discussed in this book are validated by using appropriate experimental measurements. The 4H-SiC has been chosen as the semiconductor material for the experimental studies. However, the theories and models presented in this book are valid for any semiconductor material.
Autoren-Porträt von Prajukta Mukherjee, Aritra Acharyya
Mukherjee, PrajuktaDr. Aritra Acharyya is currently working at the Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, West Bengal, 736170, India, as an assistant professor.
Bibliographische Angaben
- Autoren: Prajukta Mukherjee , Aritra Acharyya
- 2020, 84 Seiten, Maße: 22 cm, Kartoniert (TB), Englisch
- Verlag: LAP Lambert Academic Publishing
- ISBN-10: 6202669691
- ISBN-13: 9786202669696
Sprache:
Englisch
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