Impact Ionization
Numerical Treatment for Semiconductor Device Simulation
(Sprache: Englisch)
Impact ionization has been drawing considerableattention since the beginning of investigations ofhot carrier transport. However, impact ionizationrates reported in the literature often differ byseveral orders of magnitude, giving rise to the needfor...
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Impact ionization has been drawing considerableattention since the beginning of investigations ofhot carrier transport. However, impact ionizationrates reported in the literature often differ byseveral orders of magnitude, giving rise to the needfor thorough numerical studies. This book brieflyintroduces the theory needed for a physicalunderstanding of the impact ionization process insemiconductors. It focuses however on computationalaspects and empirical numerical studies explaining away to efficiently calculate impact ionizationrates, especially applied to silicon forsemiconductor device simulation. In-depth formulaeand numerical values make it an invaluable source ofinformation for both physicists and engineers in thefield.
Autoren-Porträt von Christian Peter May
May Christian PeterChristian Peter May studied physics in Tübingen (Germany) andStony Brook (USA). He was supported by the "Studienstiftung desdeutschen Volkes" during his studies. Currently, he is a researchassistant at the Institute for Theoretical Physics at ETH Zürich(Switzerland), where he is pursuing his PhD.
Bibliographische Angaben
- Autor: Christian Peter May
- 2008, 124 Seiten, Maße: 22 cm, Kartoniert (TB), Englisch
- Verlag: VDM Verlag Dr. Müller e.K.
- ISBN-10: 3639082966
- ISBN-13: 9783639082968
Sprache:
Englisch
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