Crystal Growth Processes Based on Capillarity (PDF)

Preface Acknowledgements Nomenclature List of Contributors 1. Basic Principles of Capillarity in Relation with Crystal Growth N. Eustathopoulos and B. Drevet 1.1 Introduction 1.2 Definitions 1.3 Contact Angles 1.4 Growth angles Acknowledgments References 2. Shape Stability in Capillary Crystal Growth as Possibility and Practical Realization of Shaped Crystals V. A. Tatartchenko 2.1 Introduction 2.2 Crucible-less Crystal Growth - Capillary Shaping Techniques (CST) 2.3 Dynamic Stability of Crystallization- the Basis of Shaped Crystal Growth by CST 2.4 Stability Analysis and Growth of Shaped Crystals by the Cz Technique 2.5 Stability Analysis and Growth of Shaped Crystals by the Verneuil technique 2.5. Stability Analysis and Growth of Shaped Crystals by the FZ Technique 2.6. TPS-Capillary Shaping 2.7 Brief presentation of shaped Ge, sapphire, Si, and Metal growth 2.8 TPS Peculiarities References 3 Czochralski Process Dynamics and Control Design Jan Winkler, Michael Neubert, Joachim Rudolph, Ning Duanmu and Michael Gevelber 3.1 Introduction and motivation 3.2 Czochralski control approaches 3.3 Mathematical model 3.4 Process Dynamics Analysis for Control 3.5 Conventional control design 3.6 Geometry based nonlinear control design 3.7 Advanced Techniques References 4 Floating Zone Crystal Growth Anke Lüdge, Helge Riemann, Michael Wünscher, Günter Behr, Wolfgang Löser, Andris Muiznieks and Arne Cröll 4.1 Introduction 4.2 FZ Processes with RF Heating 4.3 Floating Zone Growth with Optical Heating 4.4 Numerical Analysis of the Needle-eye Floating Zone Process References 5 Shaped Crystal Growth V. N. Kurlov, S. N. Rossolenko, N. V. Abrosimov and K. Lebbou 5.1 Introduction 5.2 Shaped Silicon 5.3 Sapphire Shaped Crystal Growth 5.4. Shaped crystals grown by micro-pulling down technique (µ-PD) 5.5 Conclusions References 6 Vertical Bridgman and Dewetting Thierry Duffar and Lamine Sylla 6.1 Introduction 6.2 Peculiarities and Drawbacks of the Bridgman Processes 6.3 Full Encapsulation

Thierry Duffar is professor at Grenoble Polytechnic Institute (France) where he received his PhD in chemical engineering. Professor Duffar is a member of various scientific committees including the International Organization of Crystal Growth and the International Union of Crystallography and he was chair of the organizing committee for 14th International Conference on Crystal Growth in Grenoble in 2004. Professor Duffar is the (co)author of more than 100 publications in refereed scientific journals. His current research interests include the electromagnetic processing of materials, the effect of electromagnetic and gravity fields on crystal growth processes, studies on structural defect generation in materials and the means to control them and the elaboration of photovoltaic silicon.

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