Dielectric Films for Advanced Microelectronics / Wiley Series in Materials for Electronic & Optoelectronic Applications (PDF)

Series Preface. Preface. (Mikhail Baklanov, Martin Green and Karen Maex). 1. Low and Ultralow Dielectric Constant Films Prepared by Plasma-Enhanced Chemical Vapor Deposition. (A. Grill). 2. Spin-On Dielectric Materials. (Geraud Dubois, Willi Volksen and Robert D. Miller). 3.Porosity of Low Dielectric Constant Materials. 3.1 Positron Annihilation Spectroscopy. (David W. Gidley, Hua-Gen Peng, and Richard Vallery). 3.2Structure Characterization of Nanoporous Interlevel Dielectric Thin Films with X-ray and Neutron Radiation. (Christopher L. Soles, Hae-Jeong Lee, Bryan D. Vogt, Eric K. Lin, Wen-li Wu). 3.3 Ellipsometric Porosimetry. (M. R. Baklanov). 4.Mechanical and Transport Properties of Low-k Dielectrics. (J.L. Plawsky, R. Achanta, W. Cho, O. Rodriguez, R. Saxena, and W.N. Gill). 5. Integration of low-k dielectric films in damascene processes. (R.J.O.M. Hoofman, V.H. Nguyen,V. Arnal, M. Broekaart, L.G. Gosset,W.F.A. Besling, M. Fayolle and F. Iacopi). 6. ONO structures and oxynitrides in modern microelectronics. Material science, characterization and application. (Yakov Roizin and Vladimir Gritsenko). High Dielectric constant Materials. 7. Material Engineering of High-k Gate Dielectrics. (Akira Toriumi and Koji Kita). 8. Physical Characterisation of ultra-thin high-k dielectric. (T. Conard, H. Bender and W. Vandervorst). 9. Electrical Characterization of Advanced Gate Dielectrics. (Robin Degraeve, Jurriaan Schmitz, Luigi Pantisano, Eddy Simoen, Michel Houssa, Ben Kaezer, and Guido Groeseneken). Medium dielectric constant materials. 10. Integration Issues of High-k Gate Dielectrics. (Yasuo Nara). Dielectric films for interconnects (packaging). 11. Anisotropic Conductive Film (ACF) for Advanced Microelectronic Interconnects. (Yi Li, C. P. Wong). Index.

Karen Maex, IMEC Fellow, Silicon Process and Device
Technology Division, Leuven, Belgium & Professor at Katholieke
Universiteit Leuven

Mikhail R. Baklanov, Principal Scientist, Silicon Process
and Device Technology Division, IMEC, Leuven, Belgium

IMEC is the largest independent microelectronics R&D centre
in Europe, with over 1250 staff. R&D ranges from the design of
complex single-chip and single-package systems for
telecommunications and multimedia, new process technologies for
optoelectronics, photovoltaics, area-array packing, etc.

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