Measurement and Modeling of Silicon Heterostructure Devices (ePub)
(Sprache: Englisch)
When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually...
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Produktinformationen zu „Measurement and Modeling of Silicon Heterostructure Devices (ePub)“
When you see a nicely presented set of data, the natural response is: "e;How did they do that; what tricks did they use; and how can I do that for myself?"e; Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.
Autoren-Porträt von John D. Cressler
John D. Cressler
Bibliographische Angaben
- Autor: John D. Cressler
- 2018, 200 Seiten, Englisch
- Verlag: Taylor & Francis
- ISBN-10: 1351834762
- ISBN-13: 9781351834766
- Erscheinungsdatum: 03.10.2018
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- Dateiformat: ePub
- Größe: 7.27 MB
- Mit Kopierschutz
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Sprache:
Englisch
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