Multi-run Memory Tests for Pattern Sensitive Faults (PDF)
(Sprache: Englisch)
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering...
sofort als Download lieferbar
eBook (pdf)
53.49 €
26 DeutschlandCard Punkte sammeln
- Lastschrift, Kreditkarte, Paypal, Rechnung
- Kostenloser tolino webreader
Produktdetails
Produktinformationen zu „Multi-run Memory Tests for Pattern Sensitive Faults (PDF)“
This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory. The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.
- Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
- Presents practical algorithms for design and implementation of efficient multi-run tests;
- Demonstrates methods verified by analytical and experimental investigations.
Autoren-Porträt von Ireneusz Mrozek
Ireneusz Mrozek received his M.Sc. and Ph.D. degrees in computer science in 1994 and 2004,respectively. Since 1994 he has been employed at the Faculty of Computer Science of Bialystok Technical University (Poland). His main research interests include the area of diagnostic testing of embedded memories. Particularly, he focuses on transparent tests for RAM as well as the application of these in the BIST or BISR schemes. He has also gained industrial experience working as a Senior Software Engineer at Motorola Solutions.
Bibliographische Angaben
- Autor: Ireneusz Mrozek
- 2018, 1st ed. 2019, 135 Seiten, Englisch
- Verlag: Springer-Verlag GmbH
- ISBN-10: 3319912046
- ISBN-13: 9783319912042
- Erscheinungsdatum: 06.07.2018
Abhängig von Bildschirmgröße und eingestellter Schriftgröße kann die Seitenzahl auf Ihrem Lesegerät variieren.
eBook Informationen
- Dateiformat: PDF
- Größe: 2.58 MB
- Ohne Kopierschutz
- Vorlesefunktion
Sprache:
Englisch
Kommentar zu "Multi-run Memory Tests for Pattern Sensitive Faults"
0 Gebrauchte Artikel zu „Multi-run Memory Tests for Pattern Sensitive Faults“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "Multi-run Memory Tests for Pattern Sensitive Faults".
Kommentar verfassen