Advances in Chemical Mechanical Planarization (CMP)
Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology...
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Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects.
This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes.
Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction.
Bibliographische Angaben
- Herausgegeben:Suryadevara, Babu
- Verlag: Woodhead Publishing
- EAN: 9780081001653
Autoren-Porträt
Suryadevara Babu is distinguished professor and former director of the Center for Advanced Materials Processing (CAMP) at Clarkson University, NY, USA. His research interests include CMP of metal and dielectric films, CMP for shallow-trench isolation, particle-free solutions for CMP, and post-CMP cleaning.
Inhaltsverzeichnis zu „Advances in Chemical Mechanical Planarization (CMP) “
Introduction Part I CMP of dielectric and metal films 1 Chemical and physical mechanisms of dielectric CMP 2 Cu CMP Challenges in 22 nm BEOL and beyond 3 Electrochemical techniques and their applications for CMP of metal films 4 Ultra low-k materials and CMP 5 CMP processing of high-mobility channel materials; alternatives to Si 6 Multiscale modeling of CMP 7 Chemical mechanical polishing (CMP) of silicon carbide (SiC) 8 Chemical and physical mechanisms of CMP of gallium nitride 9 Abrasive-free and ultralow abrasive CMP processes 10 Environmental aspects of planarization processes Part II Consumables and Process Control for Improved CMP 11 Preparation and characterization of slurry for CMP 12 Chemical Metrology Methods for CMP Quality 13 Diamond Disc Pad Conditioning in Chemical Mechanical Polishing 14 Characterization of surface processes during oxide CMP by in situ FTIR spectroscopy 15 A novel slurry injection system for CMP 16 CMP removal rate uniformity and role of carrier parameters 17 Approaches to defect characterization, mitigation and reduction 18 Applications of CMP to More than Moore Devices 19 CMP for phase change materials
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