Analysis and Simulation of Heterostructure Devices
(Sprache: Englisch)
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices....
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Klappentext zu „Analysis and Simulation of Heterostructure Devices “
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Inhaltsverzeichnis zu „Analysis and Simulation of Heterostructure Devices “
List of Acronyms List of Symbols Introduction State-of-the-Art of Materials, Device Modeling, and RF Devices Physical Models RF Parameter Extraction for HEMTs and HBTs Heterojunction Bipolar Transistors High Electron Mobility Transistors Novel Devices Appendix: Benchmark Structures References
Autoren-Porträt von Vassil Palankovski, Rüdiger Quay
Palankovski/Quay, Analysis and Simulation of Heterostructure Devices (Comput. Microelectronics)
Bibliographische Angaben
- Autoren: Vassil Palankovski , Rüdiger Quay
- 2003, 2004., 289 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Herausgegeben: S. Selberherr
- Verlag: Springer
- ISBN-10: 3211405372
- ISBN-13: 9783211405376
- Erscheinungsdatum: 18.12.2003
Sprache:
Englisch
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