Fundamentals of Nanoscaled Field Effect Transistors
(Sprache: Englisch)
This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
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This book covers principles and theory of nanoscale transistors, including quantum mechanical tunneling and inversion layer quantization and solutions like high-k and strained-Si technology, alternate structures and graphene technology. Includes case studies.
Klappentext zu „Fundamentals of Nanoscaled Field Effect Transistors “
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-¿ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Inhaltsverzeichnis zu „Fundamentals of Nanoscaled Field Effect Transistors “
Scaling of a MOS Transistor.- Nanoscale Effects- Gate Oxide Leakage Currents.- Nanoscale Effects- Inversion Layer Quantization.- Dielectrics for Nanoelectronics.- Germanium Technology.- Biaxial s-Si Technology.- Uniaxial s-Si Technology.- Alternate MOS Structures.- Graphene Technology.
Bibliographische Angaben
- Autor: Amit Chaudhry
- 2013, 2013, XIV, 201 Seiten, 102 farbige Abbildungen, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Verlag: Springer, Berlin
- ISBN-10: 1461468213
- ISBN-13: 9781461468219
- Erscheinungsdatum: 23.04.2013
Sprache:
Englisch
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