Fundamentals of RF and Microwave Transistor Amplifiers
(Sprache: Englisch)
Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.
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Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.
Klappentext zu „Fundamentals of RF and Microwave Transistor Amplifiers “
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor AmplifiersThis book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations.
Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions.
With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
The first book to provide a comprehensive treatment of RF and microwave low noise and power amplifier circuits, Fundamentals of RF and Microwave Transistor Amplifiers integrates theory with practical topics. Detailed, real-world examples and over 120 problems reinforce topics such as analyses, design, modeling, materials, fabrication, and physical, electrical and thermal practical considerations with special coverage of amplifier circuits. Graduate students, university professors, scientists, practicing engineers, and designers in the areas of RF and microwave amplifiers will benefit from the book's emphasis on theory, design and practical aspects of amplifier design in day-to-day applications.
Inhaltsverzeichnis zu „Fundamentals of RF and Microwave Transistor Amplifiers “
Chapter 1: IntroductionReferences
Chapter 2: Linear Network Analysis
References
Problems
Chapter 3: Amplifier Characteristics and Definitions
References
Problems
Chapter 4: Transistors
References
Problems
Chapter 5: Transistor Models
References
Problems
Chapter 6: Matching Network Components
References
Problems
Chapter 7: Impedance Matching Techniques
References
Problems
Chapter 8: Amplifier Classes and Analyses
References
Problems
Chapter 9: Amplifier Design Methods
References
Problems
Chapter 10: High-Efficiency Amplifier Techniques
References
Problems
Chapter 11: Broadband Amplifier Techniques
References
Problems
Chapter 12: Linearization Techniques
References
Problems
Chapter 13: High Voltage Power Amplifier Design
References
Problems
Chapter 14: Hybrid Amplifiers
References
Problems
Chapter 15: Monolithic Amplifiers
References
Problems
Chapter 16: Thermal Design
References
Problems
Chapter 17: Stability Analyses
References
Problems
Chapter 18: Biasing Networks
References
Problems
Chapter 19: Power Combining
References
Problems
Chapter 20: Integrated Function Amplifiers
References
Problems
Chapter 21: Amplifier Packages
References
Problems
Chapter 22: Transistor and Amplifier Measurements
References
Problems
Appendices
Appendix A: Physical Constants and Other Data
Appendix B: Units and Symbols
Appendix C: Frequency Band Designation
Appendix D: Decibel Units - DB
Appendix E: Mathematical Relations
Appendix F: Smith Chart
Appendix G: Graphical Symbols
Appendix H: Acronyms and Abbreviations
Appendix I: List Of Symbols
Appendix J: Multiple Access and Modulation Techniques
Autoren-Porträt von Inder Bahl
Inder J. Bahl, PhD, has been working on microwave and millimeter wave GaAs ICs for more than twenty-five years. He is responsible for the design of over 400 MMICs, including low-noise amplifiers, driver amplifiers, broadband amplifiers, power amplifiers (high-power, high-efficiency, and broadband), dc and ac coupled transimpedance and limiting amplifiers, multi-bit phase shifters, narrow and broadband SPDT switches, redundant switches, programmable attenuators, balanced mixers, quadrature downconverters, upconverters, transmit chips, receive chips and transmit/receive chips. Dr. Bahl has also developed modules consisting of MMICs for PAR and ECM applications.
Bibliographische Angaben
- Autor: Inder Bahl
- 2009, 1. Auflage, 672 Seiten, Maße: 18,6 x 25,7 cm, Gebunden, Englisch
- Verlag: Wiley & Sons
- ISBN-10: 0470391669
- ISBN-13: 9780470391662
- Erscheinungsdatum: 13.12.2010
Sprache:
Englisch
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