GaN and SiC Power Devices
From Fundamentals to Applied Design and Market Analysis
(Sprache: Englisch)
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors,...
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Klappentext zu „GaN and SiC Power Devices “
This book provides a single-source reference for any reader requiring basic and advanced information on wide bandgap semiconductors and related design topics. Focusing on practicability, it explains the principles of GaN and SiC semiconductors, manufacturing, characterization, market and design for key applications.
Inhaltsverzeichnis zu „GaN and SiC Power Devices “
Introduction.- Wide bandgap Semiconductors.- GaN overview.- SiC overview.- Electrical Characteristics.- Circuit Design with GaN and SiC.- Electric Vehicles.- Renewable Energies.- Motor Drivers.- Thermal Management.- Power Supplies.- Lidar and Space Applications.
Autoren-Porträt von Maurizio Di Paolo Emilio
Maurizio Di Paolo Emilio is Editor in Chief of Power Electronics News and EEWeb, and an EE Times correspondent. He holds a Ph.D in physics and is a telecommunications engineer. He has worked on projects concerning gravitational waves research, designing a thermal compensation system (TCS) and data acquisition and control systems, and on others about x-ray microbeams in collaboration with Columbia University and motor control for space with INFN. TCS was applied to the Virgo and LIGO experiments, which detected gravitational waves for the first time and earned the Nobel Prize in 2017.Bibliographische Angaben
- Autor: Maurizio Di Paolo Emilio
- 2024, 1st ed. 2024, XV, 264 Seiten, 41 farbige Abbildungen, Maße: 16,8 x 24 cm, Gebunden, Englisch
- Verlag: Springer, Berlin
- ISBN-10: 3031506537
- ISBN-13: 9783031506536
Sprache:
Englisch
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