Handbook of Nitride Semiconductors and Devices: Vol.3 GaN-based Optical and Electronic Devices

I. Light Emitting Diodes and Lighting Introduction
1.1 Current Conduction Mechanism in LED Like Structures
1.2 Optical Output Power
1.3 Losses and Efficiency
1.4 Current Crowding
1.5. Packaging
1.6. Perception of Visible Light and Color
1.7. Visible Light Light Terminology
1.8. Inroads by LEDs
1.9. Nitride LED Performance
1.10. On the Nature of Light Emission in Nitride Based LEDs
1.11. LED Degradation
1.12. Monochrome Applications of LEDs
1.13. Luminescence Conversion and White Light Generation With Nitride LEDs
1.14. Approaches to White-Light Generation
1.15. Low Flux White Light Applications
1.16. Organic/Polymeric LEDs (OLED, PLED)

II. Semiconductor Lasers
2.1. Introduction
2.2. A Primer to the Principles of Lasers
2.3. Waveguiding
2.4. Loss, Threshold, and Cavity Modes
2.5. Optical Gain
2.6. Coulombic Effects
2.7. Numerical Gain Calculations for GaN
2.8. Threshold Current
2.9. Analysis of Injection Lasers with Simplifying Assumptions
2.10. Recombination Lifetime
2.11. Quantum Efficiency
2.12. GaN Based LD Design and Performance
2.13. Gain Spectra of InGaN Injection Lasers
2.14. Near UV Lasers
2.15. Reflector Stacks and Vertical Cavity Surface Emitting Lasers (VCSELs)
2.16. GaInAsN Based Lasers
2.17. Reliability Issues
2.18. Application of GaN Based Lasers to DVDs
2.19. A Succinct Review of the Laser Evolution in Nitrides References Figure Captions

III. Field Effect Transistors and Heterojunction Bipolar Transistors
3.1. Modulation Doped Field Effect Transistors (MODFETs)
3.2. AlGaN/GaN MODFETs
3.3. Electronic Noise
3.4. Dielectrics for Passivation Purposes or Gate Leakage Reduction
3.5. Heat Dissipation and Junction Temperature
3.6. Hot Phonon Effects
3.7. InGaN Channel MODFETs
3.8. Heterojunction Bipolar Transistors (HBTs)
3.9. Concluding Comments

VI. Ultraviolet Detectors
4.1. Introduction
4.2. Principles of Photodetectors
4.3. Particulars of Deep UV Radiation and Detection
4.4. Si and SiC Based UV

Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.