Nano-CMOS Circuit and Physical Design
(Sprache: Englisch, Deutsch)
Based on the authors expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process...
Leider schon ausverkauft
versandkostenfrei
Buch (Gebunden)
183.20 €
Produktdetails
Produktinformationen zu „Nano-CMOS Circuit and Physical Design “
Klappentext zu „Nano-CMOS Circuit and Physical Design “
Based on the authors expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Inhaltsverzeichnis zu „Nano-CMOS Circuit and Physical Design “
1. Nano-CMOS scaling issues and implications1.1. Design methodology in the nano-CMOS era - an introduction
1.2. Physical Scaling Near Limit - innovations needed to continue performance scaling
1.3. An overview of Sub-100nm scaling challenges and sub-wavelength Optical Lithography
1.4. Process issues
1.5. Lithography issues and mask data explosion
1.6. New breed of Circuit and Physical Design Engineers
1.7. Modeling challenges
1.8. The need for Design Methodology changes for performance as well as to mitigate Mask Cost, Scalability and Manufacturability - an overview
1.9. Summary
PART 1. PROCESS TECHNOLOGY AND SUB-WAVELENGTH OPTICAL LITHOGRAPHY PHYSICS, THEORY OF OPERATION, ISSUES AND SOLUTIONS
2. CMOS Device and Process Technology
2.1 Equipment Requirements For Front-End Processing
2.2 Front-End Device Issues of the CMOS Scaling
2.3 Back-End-of-Line (BEOL) Technology
3. Theory and Practicalities of Sub-Wavelength Optical Lithography
3.1 Introduction and simple imaging theory
3.2 Challenges for the 100 nm Node
3.3 Resolution Enhancement Techniques: Physics
3.4 Physical Design Style Impact on RET and OPC Complexity
3.5 The Road Ahead: Future Lithography Technologies
PART 2. PROCESS SCALING IMPACT ON DESIGN
4 Mixed Signal Circuit Design
4.1 Introduction
4.2 Issue Overview
4.3 Device Modeling
4.4 Passive Components
4.5 Design Methododolgy
4.6 Low Voltage Techniques
4.7 Design Procedures
4.8 ESD Protection
4.9 Noise Isolation
4.10 Decoupling
4.11 Power Busing
4.12 Integration Issues
4.13 Summary
5. ESD Protection Design
5.1 Introduction
5.2 ESD Standards and Models
5.3 Basic Concept of ESD Protection Design
5.4 Low-C ESD Protection Design for High-Speed I/O
5.5 ESD Protection Design for Mixed-Voltage I/O
5.6 SCR Devices for ESD Protection
5.7 Summary
6. IO Design
6.1 IO Standards
6.2 Signal Transfer
6.3 ESD Protection
6.4 I/O
... mehr
Switching Noise
6.5 Termination
6.6 Impedance Matching
6.7 Pre-Emphasis
6.8 Equalization
6.9 Conclusions
7. DRAM
7.1 Introduction
7.2 DRAM basics
7.3 Scaling of the capacitor
7.4 Scaling of the array-transistor
7.5 Scaling of the sense-amplifier
7.6 Summary
8. Chapter 8 Signal Integrity Issues in On-Chip Interconnect
8.1. Introduction
8.2. Interconnect Parasitics Extraction
8.3. Signal Integrity Analysis
8.4. Design Solutions for Signal Integrity
8.5. Summary
9 Ultra Low Power Circuit Design
9.1 Introduction on ultra low power design
9.2 Design-time low power techniques
9.3 Run-time low power techniques
9.4 Technology innovations for low power design
9.5 Perspectives for future ultra low power design
10 Reference
PART 3. IMPACT OF PHYSICAL DESIGN ON MANUFACTURING/YIELD AND PERFORMANCE
10 Design For Manufacturability (DFM)
10.1 Motivation
10.2 Comparison of optimal and sub-optimal layouts
10.3 Global Route DFM
10.4 Analog DFM
10.5 Some Rules of Thumb
10.6 Summary
11. Design for Variability
11.1. Impact of Variations on Future Design
11.2. Strategies to Mitigate Impact due to Variations
11.3. Corner Modeling Methodology for nano-CMOS Processes
11.4. New Features of the BSIM4 Model
11.5. Summary
6.5 Termination
6.6 Impedance Matching
6.7 Pre-Emphasis
6.8 Equalization
6.9 Conclusions
7. DRAM
7.1 Introduction
7.2 DRAM basics
7.3 Scaling of the capacitor
7.4 Scaling of the array-transistor
7.5 Scaling of the sense-amplifier
7.6 Summary
8. Chapter 8 Signal Integrity Issues in On-Chip Interconnect
8.1. Introduction
8.2. Interconnect Parasitics Extraction
8.3. Signal Integrity Analysis
8.4. Design Solutions for Signal Integrity
8.5. Summary
9 Ultra Low Power Circuit Design
9.1 Introduction on ultra low power design
9.2 Design-time low power techniques
9.3 Run-time low power techniques
9.4 Technology innovations for low power design
9.5 Perspectives for future ultra low power design
10 Reference
PART 3. IMPACT OF PHYSICAL DESIGN ON MANUFACTURING/YIELD AND PERFORMANCE
10 Design For Manufacturability (DFM)
10.1 Motivation
10.2 Comparison of optimal and sub-optimal layouts
10.3 Global Route DFM
10.4 Analog DFM
10.5 Some Rules of Thumb
10.6 Summary
11. Design for Variability
11.1. Impact of Variations on Future Design
11.2. Strategies to Mitigate Impact due to Variations
11.3. Corner Modeling Methodology for nano-CMOS Processes
11.4. New Features of the BSIM4 Model
11.5. Summary
... weniger
Autoren-Porträt von Wong, Cao, Mittal
BAN P. WONG, IENG MIEE, served for five years as a member of the technical program committee of IEEE International Solid-State Circuits Conference and as session chair, cochair, and organizer of a panel session. He has three issued patents. He has led circuit design teams in developing methodology and implementation of high-performance and low-power microprocessors. He is currently Senior Engineering Manager for NVIDIA Corporation.ANURAG MITTAL received his PhD in applied physics from Yale University. He has codeveloped novel embedded NVM microcontroller and microprocessor solutions including the world's first truly CMOS-compatible Flash technology. He is Senior Staff Engineer for Virage Logic, Inc.
YU CAO received his PhD in electrical engineering from University of California, Berkeley. He is a postdoctoral researcher in the Berkeley Wireless Research Center. He received the 2000 Beatrice Winner Award at the IEEE International Solid-State Circuits Conference.
GREG STARR received his PhD in electrical engineering from Arizona State University. Currently, he is a Senior Design Manager at Xilinx Corporation.
Kommentar zu "Nano-CMOS Circuit and Physical Design"
0 Gebrauchte Artikel zu „Nano-CMOS Circuit and Physical Design“
Zustand | Preis | Porto | Zahlung | Verkäufer | Rating |
---|
Schreiben Sie einen Kommentar zu "Nano-CMOS Circuit and Physical Design".
Kommentar verfassen