Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications
(Sprache: Englisch)
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say...
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Klappentext zu „Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications “
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.
Inhaltsverzeichnis zu „Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications “
One: Growth Techniques.- 1 Bulk growth techniques.- 2 Liquid phase epitaxy.- 3 Metal-organic vapour phase epitaxy.- 4 Molecular beam epitaxy of HgCdTe.- Two: Materials Characterisation.- 5 Optical properties of MCT.- 6 Transport properties of narrow-gap II-VI compounds.- 7 Intrinsic and extrinsic doping.- 8 Point defects in narrow-gap II-VI compounds.- 9 Diffusion in narrow-gap II-VI compounds.- 10 Surfaces/interfaces of narrow-gap II-VI compounds.- 11 Trends in structural defects in narrow-gap II-VI semiconductors.- 12 Quantum wells and superlattices.- 13 Properties of diluted magnetic semiconductors.- Three: Device Applications.- 14 Photoconductive detectors in HgCdTe and related alloys.- 15 Photovoltaic IR detectors.- 16 Non-equilibrium devices in HgCdTe.- 17 Emission devices.- 18 Photoelectromagnetie, magnetoconcentration and Dember infrared detectors.- 19 Solar cells based on CdTe.- 20 Radiation detectors.
Autoren-Porträt
Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.
Bibliographische Angaben
- 2012, Softcover reprint of the original 1st ed. 1997, XXXII, 592 Seiten, Maße: 15,5 x 23,5 cm, Kartoniert (TB), Englisch
- Herausgegeben: Peter Capper
- Verlag: Springer, Berlin
- ISBN-10: 146128421X
- ISBN-13: 9781461284215
Sprache:
Englisch
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