Predictive Simulation of Semiconductor Processing

- Transistors and Atoms
- Atomistic Simulations of Processes at Surfaces
- Atomistic Simulations in Materials Processing
- Atomistic Simulation of Decanano MOSFETs
- Modeling and Simulation of Heterojunction Bipolar Transistors
- Gate Oxide Reliability: Physical and Computational Models
- High-K Dielectrics: The Example of Pr2O3
- Atomistic Simulation of Si3N4 CVD from Dichlorosilane and NH3
- Interconnects and Propagation of High Frequency Signals
- Modeling of Electromigration in Interconnects
- Predictive Modeling of Transition Metal Gathering: Applications and Materials Science Challenges.

J. Dabrowski: Born in Warsaw, Poland, Sept. 29, 1958. PhD, Institute of Physics of the Polish Academy of Science (IF PAN), Warsaw, 1989. Scientific staff member IF PAN 1983-1992; postdoctoral fellow Fritz Haber Inbstitute of the Max Planck Society, Berlin, Germany, 1990-1991; postdoctoral fellow Xerox Palo Alto Research Center, California, 1992; since 1993 with IHP-microelectronics, Frankfurt (Oder), Germany. Conference series chairman, Challenges in Predictive Process Simulation (1997, 2000, 2002); international advisory commmittee member, International Training Institute for Materials Science, Hanoi, Vietnam. Project leader, German Research Society (1998-2000); von Neuman Institute for Computing (since 1993). Author (monograph), "Silicon surfaces and formation of interfaces; basic science in the industrial world" (World Scientific, 2000). Editor (book) , "Recent Developments in Vacuum Science and Technology" (Research Signpost, 2003). Research in atomic diffusion mechanism in solid state; atomic structure of surfaces and semiconductor/dielectric interfaces; atomic structure of defects in semiconductors and insulators; signal processing for telecommunication. Achievements include discovery of atomic structure of the clean Si(113) surface; atomic structure of the main electron trap in GaAs (EL2 defect); atomic structure of the interface between a high-K dielectric (Pr2O3) and Si(001). Patents for silicon microelectronic technology; patents pending for telecommunication.

From the reviews: