Self-Assembled Quantum Dots
(Sprache: Englisch)
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well...
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Produktinformationen zu „Self-Assembled Quantum Dots “
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing.
The book will serve as a reference for anyone working with or planning to work with quantum dots.
The book will serve as a reference for anyone working with or planning to work with quantum dots.
Klappentext zu „Self-Assembled Quantum Dots “
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.
Inhaltsverzeichnis zu „Self-Assembled Quantum Dots “
InAs/GaAs Quantum Dots with multimodal Size Distribution. -Capacitance Voltage Spectroscopy of InAs Quantum Dots. -Dynamics of carrier transfer into In(Ga)As self-assembled quantum dots. -Spin phenomena in self-assembled quantum dots. -Studies of Semiconductor Quantum Dots for Quantum Information Processing. -In(Ga)As/GaAs quantum dots grown by MOCVD for opto-electronic device applications. -Excitons and spins in quantum dots coupled to a continuum of states. -Quantum Coupling in Quantum Dot Molecules. -Stress relaxation phenomena in buried quantum dots. -Carrier transfer in the arrays of coupled quantum dots. -Detailed analysis of the shape-dependent deformation field in 3D Ge islands on Si(001. -Growth and Characterization of III-Nitride Quantum Dots and their Application to Emitters. -Metal-Mask MBE technique for selective-area-growth of InAs quantum dots towards optical integrated circuit applications.
Bibliographische Angaben
- 2008, 476 Seiten, Maße: 16 x 24,1 cm, Gebunden, Englisch
- Herausgegeben: Zhiming M Wang
- Verlag: Springer, New York
- ISBN-10: 0387741909
- ISBN-13: 9780387741901
- Erscheinungsdatum: 06.12.2007
Sprache:
Englisch
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