Bestellnummer: 61473079
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Bestellnummer: 61473079
59.95 €
59.95 €
171.19 €
119.95 €
Manipulation of Topological Edge States. How Stoichiometric Changes and Surface Manipulation Influence the Dirac Cone of Topological Insulators
Andreas Eich
47.20 €
117.69 €
213.99 €
149.98 €
106.99 €
160.49 €
Realization of a new Magnetic Scanning X-ray Microscope and Investigation of Landau Structures under Pulsed Field Excitation
Markus Weigand
66.36 €
128.39 €
38.00 €
169.99 €
160.49 €
30.40 €
78.50 €
Electrical characterization of transition metals in silicon: a study on titanium, cobalt, and nickel and their interaction with hydrogen
Leopold Scheffler
30.80 €
32.00 €
119.99 €
1.1 Overview
1.2 Bulk semiconductors
1.2.1 Band structure
1.2.2 Effective mass
1.2.3 Intrinsic semiconductors
1.3 Doped semiconductors
1.3.1 Mobility
1.4 Layer systems
1.4.1 Semiconductor heterostructures
1.4.2 2-dimensional electron gases
1.4.3 Characteristic length scales
1.5 Quantum wires and nanowires
1.5.1 Electron beam lithography
1.5.2 Semiconductor nanowires
1.5.3 Split-gate quantum point contacts
1.6 Zero-dimensional structures: quantum dots
1.6.1 Transport at small source-drain bias voltages
1.6.2 Transport as a function of source-drain bias voltage
2 Magnetism in Solids
2.1 Overview
2.1.1 Definitions
2.1.2 Magnetization
2.1.3 Classification
2.2 Paramagnetism
2.2.1 Paramagnetism of localized moments
2.2.2 Hund's rule
2.2.3 Pauli paramagnetism
2.3 Collective Magnetism
2.3.1 Exchange interaction
2.3.2 Stoner-model
3 Diluted Magnetic Semiconductors
3.1 Overview
3.2 II-VI diluted magnetic semiconductors
3.3 III-V diluted magnetic semiconductors
3.4 Transport properties of III-V diluted magnetic semiconductors
4 Spin Injection
4.1 Overview
4.2 Resistor model
4.3 Local description of spin injection
4.4 Detection of spin-polarized carriers
4.5 Experiments on optical detection of spin polarization
4.6 Injection through a barrier
4.7 Experiments on spin injectors with interface barriers
5 Spin Transistor
5.1 Overview
5.2 InAs-based 2-dimensional electron gases
5.3 The Rashba effect
5.4 Strength of the Rashba spin-orbit coupling
5.5 Magnetoresistance measurements
5.5.1 Landau quantization
5.5.2 Beating patterns due to the Rashba effect
5.5.3 Gate-control of the Rashba effect
5.6 Dresselhaus term
5.7 Electron interference effects
5.7.1 Weak localization
5.7.2 Weak antilocalization
5.8 Rashba effect in quasi-one-dimensional structures
5.8.1 Rashba effect in planar quasione-dimensional structures
5.8.2 Rashba effect in tubular structures
6 Magnetic Domains
6.1 Overview
6.2 Formation of
6.3 Domain walls
6.4 Magnetic electrodes
6.5 Local Hall effect measurements
6.6 Micromagnetic simulations
6.7 Domain wall motion
6.8 Magnetic race track memory
6.9 Magnetic domain wall logic
7 Spin Hall Effect
7.1 Introductory remarks
7.2 Spin Hall effect basic phenomena
7.3 Spin-Hall effect in GaAs
7.4 Detection of the spin Hall effect by electroluminescence
- Autor: Thomas Schäpers
- 368 Seiten, 100 farbige Abbildungen, Maße: 17,2 x 24,1 cm, Kartoniert (TB), Englisch
- Verlag: De Gruyter
- ISBN-10: 3110361671
- ISBN-13: 9783110361674
- Erscheinungsdatum: 25.04.2016
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171.19 €
119.95 €
Manipulation of Topological Edge States. How Stoichiometric Changes and Surface Manipulation Influence the Dirac Cone of Topological Insulators
Andreas Eich
47.20 €
117.69 €
213.99 €
149.98 €
106.99 €
160.49 €
Realization of a new Magnetic Scanning X-ray Microscope and Investigation of Landau Structures under Pulsed Field Excitation
Markus Weigand
66.36 €
128.39 €
38.00 €
169.99 €
160.49 €
30.40 €
78.50 €
Electrical characterization of transition metals in silicon: a study on titanium, cobalt, and nickel and their interaction with hydrogen
Leopold Scheffler
30.80 €
32.00 €
119.99 €
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