Simulation of Semiconductor Processes and Devices 1998

for Quartermicron CMOS Devices
- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon
- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations
- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation
- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions
- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs
- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model
- Quantum Effects in the Simulation of Conventional Devices
- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations
- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates
- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques
- Microsystems CAD: from FEM to System Simulation
- Methods for Model Generation and Parameter Extraction for MEMS
- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices
- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design
- 3D Modeling of Sputter Process with Monte Carlo Method
- Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation
- Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT
- Monte Carlo Modelling of Spin Relaxation in a III-V Two Dimensional Electron Channel
- Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling
- Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation
- A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation
- Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method
- Three-Dimensional Adaptive Mesh Relaxation
- Grid Adaptation for Device Simulation According to the Dissipation Rate
- Single Electron Memory Device Simulations
- TCAD Oriented Simulation of Single-Electron Transistors at Device Level
- Quantum Electron-Phonon Interaction for Transport in Open Nanostructures
- Origin of Drain-Current Oscillation in Ultra-Thin-SOI n-MOSFET
- Scattering Theory of Carrier Transport in Semiconductor Devices
- Statistically Reliable 'Atomistic' Simulation of Sub 100nm MOSFETs
- On the Modeling of CV Data for State-of-the-Art CMOS Technologies: Do We Need to Include Fast Interface States ?
- New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model
- Influence of the Ge Concentration on the Threshold Voltage and Subthreshold Slope of Nanoscale Vertical Si/SiGe pMOSFETs
- Anisotropic Ballistic In-Plane Transport of Electrons in Strained Si
- Simulation of Be Diffusion in the Base Layer of InGaAs/InP Heterojunction Bipolar Transistors
- Hydrodynamic Mixed-Mode Simulation
- Simulation of Dynamic Ionization Effects in 6H-SiC Devices
- Coupled 3D Process and Device Simulation of Advanced MOSFETs
- Analysis of the Asymmetric Breakdown Characteristics of Trench Isolation Structure by Using TCAD
- Characterisation of the Corner Effect by Composed 2D Device Simulations
- A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs
- A Physically-Based Compact Model for LDMOS Transistors
- Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes
- Numerical Simulation of Infrared Laser Probing Techniques
- Quasi 3-D Simulation of Quantum Well DFB Lasers
- Simulation of AVC Measurements
- Statistical Circuit Modeling
- A New Compact Model for the Analysis of the Anomalies in I-V Characteristics of Schottky Diodes
- Investigation of Non-Punch-Through IGBTs with Different Trench Designs
- Elimination of Non-Simultaneous Triggering Effects in Finger-type ESD Protection Tansistors Using Heterojunction Buried Layer
- Influence of the S/D Architecture on the VT of Deep Submicron MOSFETs
- A Physically-Based Electron Mobility Model for Silicon Device Simulation
- Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE
- Hydrodynamic Model for Hot Carriers in Silicon Based on the Maximum Entropy Formalism
- Minimizing Bitline Coupling Noise in DRAM with Capacitor-Equiplanar-to-Bitline (CEB) Cell Structure
- The Modeling of Electromigration: A New Challenge for TCAD?
- Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures
- Accurate Layout-Based Interconnect Analysis
- Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules
- Molecular Dynamics Analysis of Grain-Boundary Grooving in Thin Film Interconnects for ULSIs
- Industrial Demands on Process and Device Simulation
- Point Defect Parameter Extraction through Their Reaction with Dislocation Loops
- Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion
- A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model
- Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells
- Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells
- Simulation Based Development of EEPROM Devices within a 0.35 µ m Process
- Modeling the Trapping and De-Trapping of Phosphorus at the Si to SiO2 Interface
- Derived Boundary Conditions for Viscous Thermal Oxidation Equations in Pressure Potential Form
- Modeling and Simulation of Oxygen Precipitation in CZ Silicon
- Predictive Soft Error Rate Evaluation System
- Modeling of Particle-Irradiated Devices
- 3-D Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in p- on p+ Epitaxial Substrates
- Author Index