The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
(Sprache: Englisch)
Proceedings of the Electronics and Dielectrics Science Divisions of the Electrochemical Society's Second Symposium on the Physics and Chemistry of the SiO2 and the Si-SiO2 Interface held in St. Louis, Missouri, May 18-21, 1992
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Produktinformationen zu „The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 “
Proceedings of the Electronics and Dielectrics Science Divisions of the Electrochemical Society's Second Symposium on the Physics and Chemistry of the SiO2 and the Si-SiO2 Interface held in St. Louis, Missouri, May 18-21, 1992
Inhaltsverzeichnis zu „The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 “
Thermal Oxidation Mechanisms and Modeling: Silicon Oxides and Oxidation; A.M. Stoneham. Novel Oxidation Methods and Characterization: New Approach to Chemically Enhanced Oxidation; R.J. Jaccodine. Deposition and Properties of SiO2: Low Temperature Synthesis and Characterization of Silicon Dioxide Films; G.S. Chakravarthy, et al. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition: Pre-Gate Oxide Si Surface Control; M. Morita, T. Ohmi. Chemical, Structural, and Microroughness Effects at the SiSiO2 Interface: Dependence of Surface Microroughness on Types of Silicon Substrates; T. Ohmi, et al. Novel Structures, Processes, and Phenomena: Properties of Simox and Related Systems; S. Cristoloveanu, T. Ouisse. Defects and Hot-Carrier Induced Damage in SiSiO2 Systems: Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems. 56 additional articles. Index.
Bibliographische Angaben
- 1993, 1993, 503 Seiten, Maße: 18,3 x 26 cm, Gebunden, Englisch
- Herausgeber: Deal, B.E., Helms, C.R.
- Herausgegeben: C. R. Helms, B. E. Deal
- Verlag: Springer
- ISBN-10: 0306444194
- ISBN-13: 9780306444197
- Erscheinungsdatum: 30.09.1993
Sprache:
Englisch
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