Wide Bandgap Semiconductors for Power Electronics

Introduction PART I. SILICON CARBIDE (SiC) Bulk Growth of hex-SiC Industrial Perspectives on hex-SiC Bulk Growth CVD Epitaxy of hex-SiC Industrial Perspective on CVD Epitaxy of hex-SiC Bulk and Epitaxial Growth of c-SiC Intrinsic Defects in SiC Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC MOS Gate Oxide Interface Defects in SiC SiC-Graphene Interfaces Device Processing Using c-SiC and hex-SiC Unipolar SiC Devices Bipolar SiC Devices Reliability of SiC Devices Industrial Systems Using SiC Circuits Hybrid Electric Vehicles and Electric Vehicles Applications of SiC Novel Applications of SiC in Quantum Information PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3 Ammonothermal and HVPE Bulk Growth of GaN GaN on Si HPSG and CVD Growth of Diamond Diamond Epitaxy and Device Processing Epitaxial Growth of Beta-Ga2O3

Peter Wellmann is Professor at the University of Erlangen-Nuremberg, Germany, and Chair of the Department of Materials for Electronics and Energy Technology. After his PhD he was postdoctoral researcher at the Materials Department of the University of California Santa Barbara, USA. He did his habilitation in Erlangen in 2001 on the topic of vapor growth and characterization of silicon carbide. Peter Wellmann was Visiting Professor at the National Polytechnic Institute of Grenoble and at the University of Montpellier 2, France.
 
Noboru Ohtani is Professor at the School of Science and Technology and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan. He earned his PhD degree in 1993 from Imperial College London, UK. Prior to joining Kwansei Gakuin University, he worked at the Advanced Technology Research Laboratories of the Nippon Steel Corporation.
 
Roland Rupp is Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications. He obtained his Diploma from the University of Erlangen-Nuremberg, and subsequently worked as Research Engineer at Stettner&Co. He then returned to university to obtain his PhD and afterwards worked as Development Engineer at Siemens AG for seven years before taking on his current position.