Crystal Growth Technology (ePub)

Preface PART I: Basic Concepts in Crystal Growth Technology THERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSES Introduction General Approach of Thermodynamic Modeling Crystal Growth in the System Si-C-O-Ar (Example 1) Crystal Growth of Carbon-Doped GaAs (Example 2) Summary and Conclusions MODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALS Introduction Model Description Results and Discussions Conclusions ADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCE Introduction Axial Vibrational Control in Crystal Growth AVC-Assisted Czochralski Method AVC-Assisted Bridgman Method AVC-Assisted Floating Zone Method Conclusions PART II: Semiconductors NUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICS Introduction Directional Solidification Method Crystallization Process Impurity Incorporation in Crystals Summary CHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANT Introduction Retrospection Crystal Growth Without B2O3 Encapsulant Inclusions, Precipitates and Dislocations Residual Impurities and Special Defect Studies Electrical and Optical Properties in SI GaAs Boron in SC GaAs Outlook on TMF-VCz Conclusions THE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGY Introduction Selected Fundamentsals TMF Generation in Heater-Magnet Modules The HMM Design Numerical Measurements Growth Results under TMF Conclusions and Outlook MANUFACTURING OF BULK AlN SUBSTRATES Introduction Modeling Experiment Results and Discussion Conclusions INTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaN Introduction Classification, Nomenclature and Characterization of Dislocations in SiC and GaN Conversion of Basal Plane Dislocations During SiC Epitaxy Reduction of Dislocations During Homoepitaxy of GaN Conclusions LOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTS Introduction

Peter Capper is a Materials Team Leader at SELEX GALILEO Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material mercury cadmium telluride (MCT). He holds the patent for the application of the accelerated crucible rotation technique to Bridgman growth and is recognised as a world authority on MCT. He has authored/co-authored over 100 Journal articles and edited/co-edited/co-written 10 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium (France) and a SPIE Symposium (USA) and has edited/co-edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics and is a Series Editor on the Wiley Series `Materials for Electronic and Optoelectronic Appliations¿. In 2008 he received an award from the Swiss Crystallographic Society for his bulk growth work.

Peter Rudolph is currently the coordinator of the technology department of the Leibniz-Institute for Crystal Growth in Berlin. His present research field is the growth of semiconductor crystals (GaAs, Ge, Si) in magnetic fields. He obtained the PhD in Solid State Physics at the Technical University of Lvov in 1972, and in 1985 the Professor position at the Humboldt University in Berlin. From 1993-94 he was Guest Professor at the Tohoku University in Sendai. He is associate editor of J. Crystal Growth, president of the German Society of Crystal Growth and member of the IOCG executive committee. He is the author of one monograph, more than 200 papers and book chapters, 7 books editions and 33 patent descriptions. He acted as co-chair and advisor of several international conferences and schools. He received innovation prizes in 2001 and 2008.

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