Epitaxial Growth of III-Nitride Compounds / Springer Series in Materials Science Bd.269 (PDF)
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This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Yoshihiro Kangawa has been an Associate Professor at the Research Institute for Applied Mechanics (RIAM) of Kyushu University, Fukuoka, Japan since 2005. He received his Doctor of Engineering from Kyushu University and was a research associate at Gakushuin University, Tokyo, Japan from 2000 to 2002. He subsequently served as a research associate at the Department of Applied Chemistry at Tokyo University of Agriculture and Technology from 2002 to 2004. His research is concerned with theoretical investigation of the crystal growth mechanism, e.g. using ab initio-based approaches and thermodynamic analysis.
- 2018, 1st ed. 2018, 223 Seiten, Englisch
- Herausgegeben: Takashi Matsuoka, Yoshihiro Kangawa
- Verlag: Springer-Verlag GmbH
- ISBN-10: 3319766414
- ISBN-13: 9783319766416
- Erscheinungsdatum: 17.04.2018
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- Größe: 9.98 MB
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